Inventor
HONG SEUNG-BUM
KR75 patents
⚠️ This page may combine multiple inventors who share the name “HONG SEUNG-BUM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
43 patentsUS7027364B2Apr 11, 2006
Information storage apparatus using a magnetic medium coated with a wear-resistant thin film
SAMSUNG ELECTRONICS CO LTD23 citations92
US6854648B2Feb 15, 2005
Information storage apparatus using semiconductor probe
SAMSUNG ELECTRONICS CO LTD35 citations92
US6784475B2Aug 31, 2004
Thermally stable ferroelectric memory
SAMSUNG ELECTRONICS CO LTD19 citations92
US7719162B2May 18, 2010
Electrostatic actuator and controller with PWM driving
SAMSUNG ELECTRONICS CO LTD15 citations84
US7489618B2Feb 10, 2009
Position detection system of probe-based data storage apparatus and position detection method
SAMSUNG ELECTRONICS CO LTD12 citations84
US7338831B2Mar 4, 2008
Method of fabricating semiconductor probe with resistive tip
SAMSUNG ELECTRONICS CO LTD11 citations84
US7406020B2Jul 29, 2008
Method of writing data on a storage device using a probe technique
SAMSUNG ELECTRONICS CO LTD13 citations83
US7319224B2Jan 15, 2008
Semiconductor probe with resistive tip and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD14 citations83
US7142077B2Nov 28, 2006
Two-axis actuator with large stage
SAMSUNG ELECTRONICS CO LTD11 citations82
US7968253B2Jun 28, 2011
Nano imprint master and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations74
US7746589B2Jun 29, 2010
Bit patterned medium, reading head for reading data recorded on bit patterned medium, and hard disk drive for recording/reading data on/from bit patterned medium
SAMSUNG ELECTRONICS CO LTD7 citations74
US7316072B2Jan 8, 2008
XY stage module, storage system employing the same and method for fabricating the XY stage module
SAMSUNG ELECTRONICS CO LTD8 citations74
US7170843B2Jan 30, 2007
High-density data storage medium, method of manufacturing the data storage medium, data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus
SAMSUNG ELECTRONICS CO LTD8 citations74
US7247968B2Jul 24, 2007
Two-axis micro-actuator with multidimensional actuation with large area stage
SAMSUNG ELECTRONICS CO LTD8 citations71
US7911928B2Mar 22, 2011
High density data storage device and data recording or reproduction method using the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7787208B2Aug 31, 2010
Bit patterned medium having super-track, method of tracking track of bit patterned medium, head appropriate for bit patterned medium, and information recording/reproducing apparatus including bit patterned medium head
SAMSUNG ELECTRONICS CO LTD3 citations63
US7759954B2Jul 20, 2010
Semiconductor probe having resistive tip and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7746753B2Jun 29, 2010
Method of reproducing information using semiconductor probe and device adopting the semiconductor probe
SAMSUNG ELECTRONICS CO LTD3 citations63
US7671616B2Mar 2, 2010
Semiconductor probe having embossed resistive tip and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7659562B2Feb 9, 2010
Electric field read/write head and method of manufacturing same and data read/write device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7502305B2Mar 10, 2009
Data storage device and method of tracking data stored in the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7479212B2Jan 20, 2009
Method of manufacturing high-density data storage medium
SAMSUNG ELECTRONICS CO LTD2 citations63
US7464584B2Dec 16, 2008
Semiconductor probe and method of writing and reading information using the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7419843B2Sep 2, 2008
Method of manufacturing semiconductor probe having resistive tip
SAMSUNG ELECTRONICS CO LTD4 citations63
US7411210B2Aug 12, 2008
Semiconductor probe with resistive tip having metal shield thereon
SAMSUNG ELECTRONICS CO LTD5 citations63
US7236327B2Jun 26, 2007
Information storage medium and apparatus adopting the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7808025B2Oct 5, 2010
Electric field read/write head, method of manufacturing the same, and information storage device comprising the electric field read/write head
SAMSUNG ELECTRONICS CO LTD2 citations62
US7759153B2Jul 20, 2010
Method of fabricating electric field sensor having electric field shield
SAMSUNG ELECTRONICS CO LTD2 citations62
US6696833B2Feb 24, 2004
Lorentz force microscope and method of measuring magnetic domain using Lorentz force
SAMSUNG ELECTRONICS CO LTD4 citations62
US7901804B2Mar 8, 2011
Ferroelectric media manufacturing method thereof and information storage device using the same
SAMSUNG ELECTRONICS CO LTD2 citations61
US7660146B2Feb 9, 2010
Ferroelectric recording medium
SAMSUNG ELECTRONICS CO LTD4 citations61
US7888718B2Feb 15, 2011
Charge-dipole coupled information storage medium
SAMSUNG ELECTRONICS CO LTD0 citations52
US7889628B2Feb 15, 2011
Ferroelectric recording medium and writing method for the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7828981B2Nov 9, 2010
Semiconductor probe with high resolution resistive tip and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7821680B2Oct 26, 2010
Image sensor having improved resolution and image sensing method using the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7820311B2Oct 26, 2010
Ferroelectric recording medium and writing method for the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7693028B2Apr 6, 2010
Method and apparatus for detecting probe position error in a data storage system and method and apparatus for tracking data
SAMSUNG ELECTRONICS CO LTD0 citations52
US7605014B2Oct 20, 2009
Method of fabricating resistive probe having self-aligned metal shield
SAMSUNG ELECTRONICS CO LTD0 citations52
US7602202B2Oct 13, 2009
Semiconductor probe with high resolution resistive tip having doping control layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7529119B2May 5, 2009
Magnetic logic device and methods of manufacturing and operating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7528371B2May 5, 2009
Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7489619B2Feb 10, 2009
Probe position error detecting method and apparatus in probe-based data storage system
SAMSUNG ELECTRONICS CO LTD0 citations52
US7490016B2Feb 10, 2009
Method and apparatus for calibrating position of image sensor, and method of detecting position of image sensor
SAMSUNG ELECTRONICS CO LTD1 citations52
HONG SEUNG-BUM
1 patentKOREA ADVANCED INST SCI & TECH
1 patentKIM HAE-SUNG
1 patentSK HYNIX INC
1 patentSEAGATE TECHNOLOGY LLC
1 patentSEOUL NAT UNIV IND FOUNDATION
1 patentHUTOM CO LTD
1 patentShowing the top 50 of 75 patents by PatentIndex Score.