Inventor
GE LIXIN
US16 patents
⚠️ This page may combine multiple inventors who share the name “GE LIXIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
QUALCOMM INC
13 patentsUS9633996B1Apr 25, 2017
High density area efficient thin-oxide decoupling capacitor using conductive gate resistor
QUALCOMM INC8 citations83
US8980708B2Mar 17, 2015
Complementary back end of line (BEOL) capacitor
QUALCOMM INC8 citations82
US11296083B2Apr 5, 2022
Three-dimensional (3D), vertically-integrated field-effect transistors (FETs) electrically coupled by integrated vertical FET-to-FET interconnects for complementary metal-oxide semiconductor (CMOS) cell circuits
QUALCOMM INC2 citations72
US10247617B2Apr 2, 2019
Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs)
QUALCOMM INC2 citations72
US9269492B2Feb 23, 2016
Bone frame, low resistance via coupled metal oxide-metal (MOM) orthogonal finger capacitor
QUALCOMM INC6 citations71
US9252104B2Feb 2, 2016
Complementary back end of line (BEOL) capacitor
QUALCOMM INC4 citations71
US10333007B2Jun 25, 2019
Self-aligned contact (SAC) on gate for improving metal oxide semiconductor (MOS) varactor quality factor
QUALCOMM INC1 citations61
US11973020B2Apr 30, 2024
Metal-insulator-metal capacitor with top contact
QUALCOMM INC0 citations51
US10665678B2May 26, 2020
Transistor with fluorinated graphene spacer
QUALCOMM INC0 citations51
US10263080B2Apr 16, 2019
Transistor with fluorinated graphene spacer
QUALCOMM INC0 citations51
US10756085B2Aug 25, 2020
Integrated circuit with metal gate having dielectric portion over isolation area
QUALCOMM INC0 citations41
US10714582B2Jul 14, 2020
Controlling dimensions of a negative capacitance layer of a gate stack of a field-effect transistor (FET) to increase power density
QUALCOMM INC0 citations41
US10636789B2Apr 28, 2020
Transistor with low resistivity carbon alloy
QUALCOMM INC0 citations41