Inventor
JEON WOO-CHUL
KR36 patents
⚠️ This page may combine multiple inventors who share the name “JEON WOO-CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS9053964B2Jun 9, 2015
Semiconductor devices including a first and second HFET and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US8860089B2Oct 14, 2014
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations84
US9231093B2Jan 5, 2016
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations83
US9306544B2Apr 5, 2016
Electronic device including transistor and method of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US9245738B2Jan 26, 2016
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US8772834B2Jul 8, 2014
High electron mobility transistor and method of driving the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US8890212B2Nov 18, 2014
Normally-off high electron mobility transistor
SAMSUNG ELECTRONICS CO LTD5 citations72
US9087704B2Jul 21, 2015
Semiconductor devices and methods of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations70
US8939696B2Jan 27, 2015
Automatic carrier transfer for transferring a substrate carrier in a semiconductor manufacturing post-process and method of transferring the substrate carrier using the same
SAMSUNG ELECTRONICS CO LTD4 citations70
US9379102B2Jun 28, 2016
Nitride-based semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations63
US9252255B2Feb 2, 2016
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US8933446B2Jan 13, 2015
High electron mobility transistors and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US9461637B2Oct 4, 2016
Method and apparatus for controlling a gate voltage in high electron mobility transistor
SAMSUNG ELECTRONICS CO LTD2 citations62
US9147738B2Sep 29, 2015
High electron mobility transistor including plurality of gate electrodes
SAMSUNG ELECTRONICS CO LTD3 citations62
US9082693B2Jul 14, 2015
Nitride semiconductor based power converting device
SAMSUNG ELECTRONICS CO LTD2 citations62
US9570597B2Feb 14, 2017
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD1 citations52
US9231057B2Jan 5, 2016
Power switching device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US9214517B2Dec 15, 2015
Semiconductor device using 2-dimensional electron gas and 2-dimensional hole gas and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations52
US8907377B2Dec 9, 2014
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US9209250B2Dec 8, 2015
High electron mobility transistors, methods of manufacturing the same, and electronic devices including the same
SAMSUNG ELECTRONICS CO LTD0 citations41
JEON WOO CHUL
6 patentsUS8525227B2Sep 3, 2013
Semiconductor device and method of manufacturing the same
JEON WOO CHUL12 citations83
US8896026B2Nov 25, 2014
Semicondutor device
JEON WOO CHUL3 citations62
US8319308B2Nov 27, 2012
Semiconductor device and method for manufacturing of the same
JEON WOO CHUL2 citations62
US8735940B2May 27, 2014
Semiconductor device and method for manufacturing the same
JEON WOO CHUL1 citations51
US8426939B2Apr 23, 2013
Semiconductor device and method for manufacturing of the same
JEON WOO CHUL0 citations51
US8319309B2Nov 27, 2012
Semiconductor device and method for manufacturing of the same
JEON WOO CHUL0 citations51
SAMSUNG ELECTRO MECH
5 patentsUS8384130B2Feb 26, 2013
Nitride semiconductor device having a two-dimensional electron gas (2DEG) channel
SAMSUNG ELECTRO MECH8 citations84
US8501557B2Aug 6, 2013
Method of manufacturing nitride semiconductor device
SAMSUNG ELECTRO MECH3 citations63
US8373245B2Feb 12, 2013
2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same
SAMSUNG ELECTRO MECH3 citations63
US8883599B2Nov 11, 2014
2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same
SAMSUNG ELECTRO MECH0 citations52
US8373200B2Feb 12, 2013
Nitride based semiconductor device and method for manufacturing of the same
SAMSUNG ELECTRO MECH1 citations52
PARK YOUNG HWAN
3 patentsUS8716754B2May 6, 2014
Nitride semiconductor device
PARK YOUNG HWAN8 citations82
US8860087B2Oct 14, 2014
Nitride semiconductor device and manufacturing method thereof
PARK YOUNG HWAN3 citations61
US8841704B2Sep 23, 2014
Nitride based semiconductor device and manufacturing method thereof
PARK YOUNG HWAN0 citations50