P

Inventor

OH JAE-JOON

KR47 patents
⚠️ This page may combine multiple inventors who share the name “OH JAE-JOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

29 patents
US6806437B2Oct 19, 2004

Inductively coupled plasma generating apparatus incorporating double-layered coil antenna

SAMSUNG ELECTRONICS CO LTD35 citations92
US9053964B2Jun 9, 2015

Semiconductor devices including a first and second HFET and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US9231093B2Jan 5, 2016

High electron mobility transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD8 citations83
US9117890B2Aug 25, 2015

High-electron mobility transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD17 citations83
US8785944B2Jul 22, 2014

High electron mobility transistor

SAMSUNG ELECTRONICS CO LTD16 citations83
US9306544B2Apr 5, 2016

Electronic device including transistor and method of operating the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US9245738B2Jan 26, 2016

High electron mobility transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US9076850B2Jul 7, 2015

High electron mobility transistor

SAMSUNG ELECTRONICS CO LTD4 citations73
US8772834B2Jul 8, 2014

High electron mobility transistor and method of driving the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US7910913B2Mar 22, 2011

Phase change memory devices

SAMSUNG ELECTRONICS CO LTD5 citations73
US8890212B2Nov 18, 2014

Normally-off high electron mobility transistor

SAMSUNG ELECTRONICS CO LTD5 citations72
US9379102B2Jun 28, 2016

Nitride-based semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations63
US9252255B2Feb 2, 2016

High electron mobility transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7476868B2Jan 13, 2009

Apparatus and method for generating ions of an ion implanter

SAMSUNG ELECTRONICS CO LTD3 citations63
US9461637B2Oct 4, 2016

Method and apparatus for controlling a gate voltage in high electron mobility transistor

SAMSUNG ELECTRONICS CO LTD2 citations62
US9147738B2Sep 29, 2015

High electron mobility transistor including plurality of gate electrodes

SAMSUNG ELECTRONICS CO LTD3 citations62
US9082693B2Jul 14, 2015

Nitride semiconductor based power converting device

SAMSUNG ELECTRONICS CO LTD2 citations62
US9859410B2Jan 2, 2018

High electron mobility transistors and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9570597B2Feb 14, 2017

High electron mobility transistor

SAMSUNG ELECTRONICS CO LTD1 citations52
US9231057B2Jan 5, 2016

Power switching device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US9214517B2Dec 15, 2015

Semiconductor device using 2-dimensional electron gas and 2-dimensional hole gas and method of manufacturing the semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations52
US8907377B2Dec 9, 2014

High electron mobility transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7410552B2Aug 12, 2008

Electron cyclotron resonance equipment with variable flare angle of horn antenna

SAMSUNG ELECTRONICS CO LTD0 citations52
US7081710B2Jul 25, 2006

Elementary plasma source and plasma generation apparatus using the same

SAMSUNG ELECTRONICS CO LTD1 citations50
US10283827B2May 7, 2019

Electrochemical cell, battery module including the same, and battery pack including the same

SAMSUNG ELECTRONICS CO LTD0 citations46
US9608100B2Mar 28, 2017

High electron mobility transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations42
US9202904B2Dec 1, 2015

Power device chip and method of manufacturing the power device chip

SAMSUNG ELECTRONICS CO LTD0 citations42
US9299800B2Mar 29, 2016

Methods of manufacturing high electron mobility transistors

SAMSUNG ELECTRONICS CO LTD0 citations41
US9209250B2Dec 8, 2015

High electron mobility transistors, methods of manufacturing the same, and electronic devices including the same

SAMSUNG ELECTRONICS CO LTD0 citations41

HWANG IN-JUN

9 patents

CHOI HYUK-SOON

3 patents

KIM HO-JUNG

2 patents

HONG KI-HA

2 patents

KIM JONG-SEOB

1 patent

WENXU XIANYU

1 patent