Inventor
OH JAE-JOON
KR47 patents
⚠️ This page may combine multiple inventors who share the name “OH JAE-JOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
29 patentsUS6806437B2Oct 19, 2004
Inductively coupled plasma generating apparatus incorporating double-layered coil antenna
SAMSUNG ELECTRONICS CO LTD35 citations92
US9053964B2Jun 9, 2015
Semiconductor devices including a first and second HFET and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US9231093B2Jan 5, 2016
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations83
US9117890B2Aug 25, 2015
High-electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD17 citations83
US8785944B2Jul 22, 2014
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD16 citations83
US9306544B2Apr 5, 2016
Electronic device including transistor and method of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US9245738B2Jan 26, 2016
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US9076850B2Jul 7, 2015
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD4 citations73
US8772834B2Jul 8, 2014
High electron mobility transistor and method of driving the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US7910913B2Mar 22, 2011
Phase change memory devices
SAMSUNG ELECTRONICS CO LTD5 citations73
US8890212B2Nov 18, 2014
Normally-off high electron mobility transistor
SAMSUNG ELECTRONICS CO LTD5 citations72
US9379102B2Jun 28, 2016
Nitride-based semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations63
US9252255B2Feb 2, 2016
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7476868B2Jan 13, 2009
Apparatus and method for generating ions of an ion implanter
SAMSUNG ELECTRONICS CO LTD3 citations63
US9461637B2Oct 4, 2016
Method and apparatus for controlling a gate voltage in high electron mobility transistor
SAMSUNG ELECTRONICS CO LTD2 citations62
US9147738B2Sep 29, 2015
High electron mobility transistor including plurality of gate electrodes
SAMSUNG ELECTRONICS CO LTD3 citations62
US9082693B2Jul 14, 2015
Nitride semiconductor based power converting device
SAMSUNG ELECTRONICS CO LTD2 citations62
US9859410B2Jan 2, 2018
High electron mobility transistors and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9570597B2Feb 14, 2017
High electron mobility transistor
SAMSUNG ELECTRONICS CO LTD1 citations52
US9231057B2Jan 5, 2016
Power switching device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US9214517B2Dec 15, 2015
Semiconductor device using 2-dimensional electron gas and 2-dimensional hole gas and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations52
US8907377B2Dec 9, 2014
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7410552B2Aug 12, 2008
Electron cyclotron resonance equipment with variable flare angle of horn antenna
SAMSUNG ELECTRONICS CO LTD0 citations52
US7081710B2Jul 25, 2006
Elementary plasma source and plasma generation apparatus using the same
SAMSUNG ELECTRONICS CO LTD1 citations50
US10283827B2May 7, 2019
Electrochemical cell, battery module including the same, and battery pack including the same
SAMSUNG ELECTRONICS CO LTD0 citations46
US9608100B2Mar 28, 2017
High electron mobility transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations42
US9202904B2Dec 1, 2015
Power device chip and method of manufacturing the power device chip
SAMSUNG ELECTRONICS CO LTD0 citations42
US9299800B2Mar 29, 2016
Methods of manufacturing high electron mobility transistors
SAMSUNG ELECTRONICS CO LTD0 citations41
US9209250B2Dec 8, 2015
High electron mobility transistors, methods of manufacturing the same, and electronic devices including the same
SAMSUNG ELECTRONICS CO LTD0 citations41
HWANG IN-JUN
9 patentsUS8569769B2Oct 29, 2013
E-mode high electron mobility transistors and methods of manufacturing the same
HWANG IN-JUN21 citations92
US9443968B2Sep 13, 2016
High electron mobility transistors including lightly doped drain regions and methods of manufacturing the same
HWANG IN-JUN10 citations84
US8816396B2Aug 26, 2014
E-mode high electron mobility transistor and method of manufacturing the same
HWANG IN-JUN15 citations84
US9660048B2May 23, 2017
High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same
HWANG IN-JUN5 citations73
US8796737B2Aug 5, 2014
High electron mobility transistors and methods of manufacturing the same
HWANG IN-JUN5 citations73
US9543391B2Jan 10, 2017
High electron mobility transistor having reduced threshold voltage variation and method of manufacturing the same
HWANG IN-JUN6 citations72
US8878246B2Nov 4, 2014
High electron mobility transistors and methods of fabricating the same
HWANG IN-JUN3 citations63
US9245947B2Jan 26, 2016
High electron mobility transistors and methods of manufacturing the same
HWANG IN-JUN2 citations62
US8835985B2Sep 16, 2014
Power electronic device and method of manufacturing the same
HWANG IN-JUN0 citations52
CHOI HYUK-SOON
3 patentsUS8294134B2Oct 23, 2012
Phase change memory devices having a current increase unit
CHOI HYUK-SOON2 citations60
US8921890B2Dec 30, 2014
Substrate structure, semiconductor device fabricated from the same, and method of fabricating the semiconductor device
CHOI HYUK-SOON1 citations50
US9123740B2Sep 1, 2015
High electron mobility transistors and methods of manufacturing the same
CHOI HYUK-SOON0 citations39