Inventor · disambiguated record
Kazuyuki Egashira
Also filed as: EGASHIRA KAZUYUKI
10 granted patents·2 pending applications·127 citations·filing 1998–2018
89Inventor score
Top patents by PatentIndex Score
12 records- 0190US6458204B1Method of producing high-quality silicon single crystalsSUMITOMO METAL IND·Filed 2000·Granted Oct 1, 2002·42 cites·20 claims
- 0286US7300518B2Apparatus and method for producing single crystal, and silicon single crystalSUMCO CORP·Filed 2005·Granted Nov 27, 2007·8 cites·6 claims
- 0382US6569535B2Silicon wafer and epitaxial silicon wafer utilizing sameSUMITOMO MITSUBISHI SILICON·Filed 2001·Granted May 27, 2003·20 cites·18 claims
- 0470US7273647B2Silicon annealed wafer and silicon epitaxial waferSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Sep 25, 2007·13 cites·7 claims
- 0569US10175471B2Imaging device including a control unit configured to counteract vibrationNEC CORP·Filed 2016·Granted Jan 8, 2019·2 cites·4 claims
- 0669US7645990B2Thermal-type infrared imaging device and operation method thereofTAKEMURA KOUJI·Filed 2007·Granted Jan 12, 2010·4 cites·16 claims
- 0767US6514335B1High-quality silicon single crystal and method of producing the sameSUMITOMO METAL IND·Filed 1998·Granted Feb 4, 2003·21 cites·11 claims
- 0866US10066313B2Method of producing single crystalHAMADA KEN·Filed 2009·Granted Sep 4, 2018·1 cites·8 claims
- 0958US6113687AMethod for making a silicon single crystal waferSUMITOMO METAL IND·Filed 1998·Granted Sep 5, 2000·14 cites·12 claims
- 1048US2020199776A1Method for producing silicon single crystalSUMCO CORP·Filed 2018·Application pending·0 cites
- 1143US7780783B2Apparatus and method for producing single crystal, and silicon single crystalSUMCO CORP·Filed 2007·Granted Aug 24, 2010·2 cites·3 claims
- 1241US2011001830A1Infrared imaging device and fixed pattern noise correction methodEGASHIRA KAZUYUKI·Filed 2009·Application pending·0 cites
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