Inventor · disambiguated record
Jorge A. Kittl
Also filed as: KITTL JORGE · KITTL JORGE A · KITTL JORGE ADRIAN
76 granted patents·9 pending applications·430 citations·filing 1997–2022
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD51TEXAS INSTRUMENTS INC17IMEC5IMEC INTER UNI MICRO ELECTR3KITTL JORGE A3
Top patents by PatentIndex Score
85 records- 0198US9941405B2Nanosheet and nanowire devices having source/drain stressors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 10, 2018·25 cites·15 claims
- 0297US9601586B1Methods of forming semiconductor devices, including forming a metal layer on source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 21, 2017·18 cites·20 claims
- 0395US9773886B1Nanosheet and nanowire devices having doped internal spacers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 26, 2017·14 cites·20 claims
- 0494US10878317B2Method and system for performing analog complex vector-matrix multiplicationSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 29, 2020·13 cites·19 claims
- 0594US9484423B2Crystalline multiple-nanosheet III-V channel FETsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 1, 2016·16 cites·17 claims
- 0693US9653287B2S/D connection to individual channel layers in a nanosheet FETSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 16, 2017·11 cites·16 claims
- 0792US9831323B2Structure and method to achieve compressively strained Si NSSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 28, 2017·8 cites·20 claims
- 0889US9768062B1Method for forming low parasitic capacitance source and drain contactsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 19, 2017·8 cites·20 claims
- 0988US10790002B2Giant spin hall-based compact neuromorphic cell optimized for differential read inferenceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 29, 2020·5 cites·17 claims
- 1088US9978833B2Methods for varied strain on nano-scale field effect transistor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 22, 2018·5 cites·18 claims
- 1185US11101320B2System and method for efficient enhancement of an on/off ratio of a bitcell based on 3T2R binary weight cell with spin orbit torque MJTs (SOT-MTJs)SAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 24, 2021·1 cites·19 claims
- 1285US10170549B2Strained stacked nanosheet FETs and/or quantum well stacked nanosheetSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 1, 2019·4 cites·33 claims
- 1385US9847245B1Filling processesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 19, 2017·4 cites·20 claims
- 1485US9634140B2Fabricating metal source-drain stressor in a MOS device channelSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 25, 2017·4 cites·34 claims
- 1584US11461620B2Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 4, 2022·5 cites·14 claims
- 1684US10909449B2Monolithic multi-bit weight cell for neuromorphic computingSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 2, 2021·3 cites·20 claims
- 1783US6187656B1CVD-based process for manufacturing stable low-resistivity poly-metal gate electrodesTEXAS INSTRUMENTS INC·Filed 1998·Granted Feb 13, 2001·58 cites·24 claims
- 1882US9613907B2Low resistivity damascene interconnectSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 4, 2017·4 cites·20 claims
- 1980US9431529B2Confined semi-metal field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 30, 2016·3 cites·24 claims
- 2079US7504329B2Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFETIMEC INTER UNI MICRO ELECTR·Filed 2006·Granted Mar 17, 2009·11 cites·28 claims
- 2178US9177812B2Method of manufacturing low resistivity contacts on n-type germaniumMARTENS KOEN·Filed 2011·Granted Nov 3, 2015·6 cites·15 claims
- 2277US9893187B2Sacrificial non-epitaxial gate stressorsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 13, 2018·2 cites·20 claims
- 2376US11769540B2Giant spin hall-based compact neuromorphic cell optimized for differential read inferenceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 26, 2023·0 cites·9 claims
- 2476US10679688B2Ferroelectric-based memory cell usable in on-logic chip memorySAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 9, 2020·3 cites·20 claims
- 2576US7759748B2Semiconductor device with reduced diffusion of workfunction modulating elementIMEC·Filed 2007·Granted Jul 20, 2010·7 cites·23 claims
- 2676US6004871AImplant enhancement of titanium silicidationTEXAS INSTRUMENTS INC·Filed 1997·Granted Dec 21, 1999·38 cites·18 claims
- 2772US11727258B2Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·18 claims
- 2871US8344460B2Method for forming a nickelsilicide FUSI gateIMEC·Filed 2011·Granted Jan 1, 2013·2 cites·5 claims
- 2969US11348629B2Giant spin hall-based compact neuromorphic cell optimized for differential read inferenceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 31, 2022·0 cites·20 claims
- 3068US12260324B2Monolithic multi-bit weight cell for neuromorphic computingSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 25, 2025·0 cites·17 claims
- 3168US10461751B2FE-FET-based XNOR cell usable in neuromorphic computingSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 29, 2019·1 cites·20 claims
- 3268US9871139B2Sacrificial epitaxial gate stressorsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 16, 2018·1 cites·20 claims
- 3367US11574193B2Method and system for training of neural networks using continuously differentiable modelsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 7, 2023·1 cites·18 claims
- 3467US9614002B10T bi-directional memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 4, 2017·2 cites·20 claims
- 3567US6326289B1Method of forming a silicide layer using a pre-amorphization implant which is blocked from source/drain regions by a layer of photoresistTEXAS INSTRUMENTS INC·Filed 1999·Granted Dec 4, 2001·25 cites·9 claims
- 3665US6204132B1Method of forming a silicide layer using an angled pre-amorphization implantTEXAS INSTRUMENTS INC·Filed 1999·Granted Mar 20, 2001·32 cites·20 claims
- 3763US6046105APreferential lateral silicidation of gate with low source and drain silicon consumptionTEXAS INSTRUMENTS INC·Filed 1998·Granted Apr 4, 2000·21 cites·8 claims
- 3862US10283638B2Structure and method to achieve large strain in NS without addition of stack-generated defectsKITTL JORGE A·Filed 2016·Granted May 7, 2019·1 cites·6 claims
- 3962US10147793B2FinFET devices including recessed source/drain regions having optimized depthsOBRADOVIC BORNA J·Filed 2014·Granted Dec 4, 2018·1 cites·14 claims
- 4062US9966449B2Methods of forming semiconductor devices, including forming a contact including an alkaline earth metal on a semiconductor layer, and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 8, 2018·1 cites·17 claims
- 4162US9917158B2Device contact structures including heterojunctions for low contact resistanceKITTL JORGE A·Filed 2015·Granted Mar 13, 2018·1 cites·16 claims
- 4262US9685509B2Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 20, 2017·1 cites·16 claims
- 4361US11289419B2Interconnects having long grains and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 29, 2022·0 cites·20 claims
- 4461US10614868B2Memory device with strong polarization couplingSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 7, 2020·1 cites·20 claims
- 4561US6372566B1Method of forming a silicide layer using metallic impurities and pre-amorphizationTEXAS INSTRUMENTS INC·Filed 1998·Granted Apr 16, 2002·25 cites·16 claims
- 4660US9343298B2Metal-insulator-metal capacitor and method for manufacturing thereofPOPOVICI MIHAELA IOANA·Filed 2011·Granted May 17, 2016·2 cites·23 claims
- 4759US11556768B2Optimization of sparsified neural network layers for semi-digital crossbar architecturesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 17, 2023·0 cites·20 claims
- 4859US11475933B2Variation mitigation scheme for semi-digital mac array with a 2T-2 resistive memory element bitcellSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·18 claims
- 4959US10739186B2Bi-directional weight cellSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 11, 2020·1 cites·20 claims
- 5058US7851297B2Dual workfunction semiconductor deviceIMEC·Filed 2008·Granted Dec 14, 2010·2 cites·18 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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