Inventor
KWON OHWON
US19 patents
⚠️ This page may combine multiple inventors who share the name “KWON OHWON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES LLC
18 patentsUS10839915B1Nov 17, 2020
Bitline boost for nonvolatile memory
SANDISK TECHNOLOGIES LLC9 citations83
US11978516B2May 7, 2024
Dynamic sense amplifier supply voltage for power and die size reduction
SANDISK TECHNOLOGIES LLC2 citations72
US11139018B1Oct 5, 2021
Memory device with temporary kickdown of source voltage before sensing
SANDISK TECHNOLOGIES LLC2 citations72
US11521675B1Dec 6, 2022
Block-dependent cell source bounce impact reduction in non-volatile memory
SANDISK TECHNOLOGIES LLC3 citations71
US10984877B1Apr 20, 2021
Multi BLCS for multi-state verify and multi-level QPW
SANDISK TECHNOLOGIES LLC5 citations71
US9959915B2May 1, 2018
Voltage generator to compensate for process corner and temperature variations
SANDISK TECHNOLOGIES LLC2 citations71
US11139022B1Oct 5, 2021
Source line voltage control for NAND memory
SANDISK TECHNOLOGIES LLC5 citations69
US11222694B1Jan 11, 2022
Reference current generator control scheme for sense amplifier in NAND design
SANDISK TECHNOLOGIES LLC3 citations66
US10971209B1Apr 6, 2021
VHSA-VDDSA generator merging scheme
SANDISK TECHNOLOGIES LLC2 citations66
US11837296B2Dec 5, 2023
Non-volatile memory with adjusted bit line voltage during verify
SANDISK TECHNOLOGIES LLC0 citations62
US11798638B2Oct 24, 2023
Mitigating neighbor interference to select gates in 3D memory
SANDISK TECHNOLOGIES LLC1 citations61
US11651800B2May 16, 2023
Sense amplifier mapping and control scheme for non-volatile memory
SANDISK TECHNOLOGIES LLC0 citations61
US11699502B2Jul 11, 2023
Simulating memory cell sensing for testing sensing circuitry
SANDISK TECHNOLOGIES LLC0 citations60
US10255978B2Apr 9, 2019
Loop control strobe skew
SANDISK TECHNOLOGIES LLC1 citations60
US11935585B2Mar 19, 2024
Pseudo multi-plane read methods and apparatus for non-volatile memory devices
SANDISK TECHNOLOGIES LLC0 citations59
US12243593B2Mar 4, 2025
Low power read method and a memory device capable thereof
SANDISK TECHNOLOGIES LLC0 citations52
US11881266B2Jan 23, 2024
Neighbor bit line coupling enhanced gate-induced drain leakage erase for memory apparatus with on-pitch semi-circle drain side select gate technology
SANDISK TECHNOLOGIES LLC0 citations51
US12361984B2Jul 15, 2025
Noise reduction in sense amplifiers for non-volatile memory
SANDISK TECHNOLOGIES LLC0 citations50