Inventor
SONG HYUN-SEUNG
KR31 patents
⚠️ This page may combine multiple inventors who share the name “SONG HYUN-SEUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
30 patentsUS11482602B2Oct 25, 2022
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations85
US9406770B2Aug 2, 2016
Method of fabricating semiconductor device having a resistor structure
SAMSUNG ELECTRONICS CO LTD13 citations84
US9184293B2Nov 10, 2015
Methods of fabricating semiconductor devices having punch-through stopping regions
SAMSUNG ELECTRONICS CO LTD9 citations84
US9786784B1Oct 10, 2017
Vertical field effect transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD15 citations83
US10825809B2Nov 3, 2020
Semiconductor device having gate isolation layer
SAMSUNG ELECTRONICS CO LTD4 citations82
US9536835B2Jan 3, 2017
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations82
US9093422B2Jul 28, 2015
Semiconductor device including fin component having parts with different widths
SAMSUNG ELECTRONICS CO LTD6 citations81
US10410931B2Sep 10, 2019
Fabricating method of nanosheet transistor spacer including inner spacer
SAMSUNG ELECTRONICS CO LTD2 citations73
US9640529B2May 2, 2017
Semiconductor device having a resistor structure
SAMSUNG ELECTRONICS CO LTD4 citations73
US12009398B2Jun 11, 2024
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US9679991B2Jun 13, 2017
Method for manufacturing semiconductor device using gate portion as etch mask
SAMSUNG ELECTRONICS CO LTD6 citations72
US9406663B2Aug 2, 2016
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD5 citations72
US8835252B2Sep 16, 2014
Methods of fabricating semiconductor devices having increased areas of storage contacts
SAMSUNG ELECTRONICS CO LTD6 citations72
US11929367B2Mar 12, 2024
Semiconductor device having gate isolation layer
SAMSUNG ELECTRONICS CO LTD2 citations71
US11488953B2Nov 1, 2022
Semiconductor device having gate isolation layer
SAMSUNG ELECTRONICS CO LTD3 citations71
US10916534B2Feb 9, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US9799607B2Oct 24, 2017
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations71
US11393909B2Jul 19, 2022
Semiconductor devices inlcluding a fin field effect transistor
SAMSUNG ELECTRONICS CO LTD2 citations70
US12249648B2Mar 11, 2025
Semiconductor device having spacer between contract patterns
SAMSUNG ELECTRONICS CO LTD0 citations62
US11380791B2Jul 5, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US10438857B2Oct 8, 2019
Semiconductor device and method of manufacturing thereof
SAMSUNG ELECTRONICS CO LTD1 citations62
US12238941B2Feb 25, 2025
Semiconductor device having gate isolation layer
SAMSUNG ELECTRONICS CO LTD0 citations61
US11923298B2Mar 5, 2024
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11355434B2Jun 7, 2022
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11978775B2May 7, 2024
Method of fabricating semiconductor devices including a fin field effect transistor
SAMSUNG ELECTRONICS CO LTD0 citations60
US12444697B2Oct 14, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations59
US11961806B2Apr 16, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations59
US9356018B2May 31, 2016
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US12453125B2Oct 21, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations50
US9548390B2Jan 17, 2017
Semiconductor device including field effect transistor
SAMSUNG ELECTRONICS CO LTD1 citations49