Inventor
YANAGISAWA TAKUYA
JP10 patents
⚠️ This page may combine multiple inventors who share the name “YANAGISAWA TAKUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO ELECTRIC INDUSTRIES
9 patentsUS10600676B2Mar 24, 2020
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
SUMITOMO ELECTRIC INDUSTRIES2 citations72
US9923063B2Mar 20, 2018
Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same
SUMITOMO ELECTRIC INDUSTRIES3 citations72
US9917004B2Mar 13, 2018
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
SUMITOMO ELECTRIC INDUSTRIES2 citations72
US11094537B2Aug 17, 2021
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
SUMITOMO ELECTRIC INDUSTRIES0 citations61
US12091773B2Sep 17, 2024
Indium phosphide single-crystal body and indium phosphide single-crystal substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations58
US11313050B2Apr 26, 2022
Indium phosphide single-crystal body and indium phosphide single-crystal substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations58
US10971374B2Apr 6, 2021
Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal
SUMITOMO ELECTRIC INDUSTRIES0 citations58
US11926923B2Mar 12, 2024
Indium phosphide single crystal and indium phosphide single crystal substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations54
US11456363B2Sep 27, 2022
Indium phosphide crystal substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations47