Inventor

HESSE MARJORIE

FR2 patents

Patents

2 patents

US12125899B2Oct 22, 2024

MOS transistor having substantially parallelepiped-shaped insulating spacers

ST MICROELECTRONICS ROUSSET0 citations54

US10930757B2Feb 23, 2021

Method of manufacturing MOS transistor spacers

ST MICROELECTRONICS ROUSSET0 citations54