P

Inventor

DUTARTRE DIDIER

FR47 patents
⚠️ This page may combine multiple inventors who share the name “DUTARTRE DIDIER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ST MICROELECTRONICS SA

25 patents
US6177717B1Jan 23, 2001

Low-noise vertical bipolar transistor and corresponding fabrication process

ST MICROELECTRONICS SA62 citations93
US6537894B2Mar 25, 2003

Process for fabricating a substrate of the silicon-on-insulator or silicon-on-nothing type and resulting device

ST MICROELECTRONICS SA43 citations92
US6472262B2Oct 29, 2002

Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistor

ST MICROELECTRONICS SA23 citations91
US7906381B2Mar 15, 2011

Method for integrating silicon-on-nothing devices with standard CMOS devices

ST MICROELECTRONICS SA14 citations84
US9711550B2Jul 18, 2017

Pinned photodiode with a low dark current

ST MICROELECTRONICS SA9 citations83
US6744080B2Jun 1, 2004

Method of manufacturing a bipolar transistor of double-polysilicon, heterojunction-base type and corresponding transistor

ST MICROELECTRONICS SA15 citations83
US9929039B2Mar 27, 2018

Method for manufacture of a semiconductor wafer suitable for the manufacture of an SOI substrate, and SOI substrate wafer thus obtained

ST MICROELECTRONICS SA3 citations73
US6873088B2Mar 29, 2005

Vibratory beam electromechanical resonator

ST MICROELECTRONICS SA6 citations71
US6238941B1May 29, 2001

Characterizing of silicon-germanium areas on silicon

ST MICROELECTRONICS SA10 citations71
US6656812B1Dec 2, 2003

Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process

ST MICROELECTRONICS SA8 citations70
US6162706ADec 19, 2000

Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic

ST MICROELECTRONICS SA6 citations70
US6583451B2Jun 24, 2003

Process for fabricating a network of nanometric lines made of single-crystal silicon and device obtained

ST MICROELECTRONICS SA3 citations63
US6642096B2Nov 4, 2003

Bipolar transistor manufacturing

ST MICROELECTRONICS SA6 citations62
US7892927B2Feb 22, 2011

Transistor with a channel comprising germanium

ST MICROELECTRONICS SA2 citations61
US7776745B2Aug 17, 2010

Method for etching silicon-germanium in the presence of silicon

ST MICROELECTRONICS SA4 citations60
US6642108B2Nov 4, 2003

Fabrication processes for semiconductor non-volatile memory device

ST MICROELECTRONICS SA4 citations60
US6776842B2Aug 17, 2004

Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic

ST MICROELECTRONICS SA4 citations59
US10535552B2Jan 14, 2020

Method for manufacture of a semiconductor wafer suitable for the manufacture of an SOI substrate, and SOI substrate wafer thus obtained

ST MICROELECTRONICS SA0 citations52
US9704903B2Jul 11, 2017

Front-side imager having a reduced dark current on SOI substrate

ST MICROELECTRONICS SA0 citations52
US9312408B2Apr 12, 2016

Imager having a reduced dark current through an increased bulk doping level

ST MICROELECTRONICS SA0 citations52
US7622368B2Nov 24, 2009

Forming of a single-crystal semiconductor layer portion separated from a substrate

ST MICROELECTRONICS SA0 citations51
US6852993B2Feb 8, 2005

Emission process for a single photon, corresponding semiconducting device and manufacturing process

ST MICROELECTRONICS SA0 citations51
US6294443B1Sep 25, 2001

Method of epitaxy on a silicon substrate comprising areas heavily doped with boron

ST MICROELECTRONICS SA0 citations48
US10262898B2Apr 16, 2019

Method for forming an electrical contact between a semiconductor film and a bulk handle wafer, and resulting structure

ST MICROELECTRONICS SA0 citations47
US6218723B1Apr 17, 2001

Integrated capacitor with high voltage linearity and low series resistance

ST MICROELECTRONICS SA0 citations46

ST MICROELECTRONICS CROLLES 2 SAS

7 patents

ST MICROELECTRONICS CROLLES 2

3 patents

DUTARTRE DIDIER

3 patents

SGS THOMSON MICROELECTRONICS

2 patents

HAOND MICHEL

1 patent

AUTONOME DE DROIT PUBLIC FRANC

1 patent

SOITEC SILICON ON INSULATOR

1 patent

FRANCE ETAT

1 patent

TISSIER ANNIE

1 patent

ST MICROELECTRONICS SRL

1 patent

MARTY MICHEL

1 patent