Inventor
IRIKURA MASATO
JP13 patents
⚠️ This page may combine multiple inventors who share the name “IRIKURA MASATO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO ELECTRIC INDUSTRIES
9 patentsUS7195545B2Mar 27, 2007
Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer
SUMITOMO ELECTRIC INDUSTRIES11 citations92
US7901960B2Mar 8, 2011
Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
SUMITOMO ELECTRIC INDUSTRIES8 citations84
US7851381B2Dec 14, 2010
Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device
SUMITOMO ELECTRIC INDUSTRIES8 citations84
US7550780B2Jun 23, 2009
Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer
SUMITOMO ELECTRIC INDUSTRIES9 citations83
US7154131B2Dec 26, 2006
Nitride semiconductor substrate and method of producing same
SUMITOMO ELECTRIC INDUSTRIES12 citations83
US8022438B2Sep 20, 2011
Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer
SUMITOMO ELECTRIC INDUSTRIES2 citations62
US7919343B2Apr 5, 2011
Group III nitride crystal and method for surface treatment thereof, group III nitride stack and manufacturing method thereof, and group III nitride semiconductor device and manufacturing method thereof
SUMITOMO ELECTRIC INDUSTRIES3 citations62
US7662239B2Feb 16, 2010
Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafers
SUMITOMO ELECTRIC INDUSTRIES3 citations62
US7390747B2Jun 24, 2008
Nitride semiconductor substrate and method of producing same
SUMITOMO ELECTRIC INDUSTRIES0 citations51
ISHIBASHI KEIJI
2 patentsUS8283694B2Oct 9, 2012
GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
ISHIBASHI KEIJI0 citations51
US8101968B2Jan 24, 2012
Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
ISHIBASHI KEIJI0 citations51