P

Inventor

KIM KYUNG-RYUN

KR27 patents
⚠️ This page may combine multiple inventors who share the name “KIM KYUNG-RYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

22 patents
US9330775B2May 3, 2016

Flash memory, flash memory system and operating method of the same

SAMSUNG ELECTRONICS CO LTD27 citations94
US10635535B2Apr 28, 2020

Semiconductor memory devices, memory systems, and methods of operating the semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD10 citations84
US9812213B2Nov 7, 2017

Flash memory, flash memory system and operating method of the same

SAMSUNG ELECTRONICS CO LTD6 citations84
US9666292B2May 30, 2017

Method of determining default read voltage of non-volatile memory device and method of reading data of non-volatile memory device

SAMSUNG ELECTRONICS CO LTD10 citations84
US9502137B2Nov 22, 2016

Method and device for optimizing log likelihood ratio (LLR) used for nonvolatile memory device and for correcting errors in nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD8 citations84
US9921749B2Mar 20, 2018

Memory system and method including determining a read voltage based on program order information and a plurality of mapping tables

SAMSUNG ELECTRONICS CO LTD9 citations83
US10706911B1Jul 7, 2020

Sense amplifier for sensing multi-level cell and memory device including the sense amplifier

SAMSUNG ELECTRONICS CO LTD3 citations73
US9858014B2Jan 2, 2018

Memory system and method of operating same using program order information

SAMSUNG ELECTRONICS CO LTD3 citations73
US9741440B2Aug 22, 2017

Memory device and read method of memory device

SAMSUNG ELECTRONICS CO LTD2 citations73
US9589661B2Mar 7, 2017

Method of programming memory device and method of reading data of memory device including the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US9501343B2Nov 22, 2016

Method of operating non-volatile memory device

SAMSUNG ELECTRONICS CO LTD6 citations73
US9478299B2Oct 25, 2016

Memory device and read method of memory device

SAMSUNG ELECTRONICS CO LTD4 citations73
US10497460B2Dec 3, 2019

Semiconductor memory devices, methods of operating semiconductor memory devices and memory systems

SAMSUNG ELECTRONICS CO LTD5 citations72
US10971247B2Apr 6, 2021

Semiconductor memory devices, memory systems, and methods of operating semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD3 citations71
US11194657B2Dec 7, 2021

Semiconductor memory devices, memory systems, and methods of operating the semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US10692582B2Jun 23, 2020

Semiconductor memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US9183944B2Nov 10, 2015

Method of writing data in non-volatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations62
US11626185B2Apr 11, 2023

Semiconductor memory devices, memory systems, and methods of operating semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD0 citations60
US11335431B2May 17, 2022

Semiconductor memory devices, memory systems, and methods of operating semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD0 citations60
US10510429B2Dec 17, 2019

Memory device performing test on memory cell array and method of operating the same

SAMSUNG ELECTRONICS CO LTD1 citations59
US10854277B2Dec 1, 2020

Sense amplifier for sensing multi-level cell and memory device including the sense amplifer

SAMSUNG ELECTRONICS CO LTD0 citations52
US9965005B2May 8, 2018

Memory diagnosis system

SAMSUNG ELECTRONICS CO LTD1 citations52

KIM KYUNG-RYUN

4 patents

MOON SANG-KWON

1 patent