P

Inventor

WON BOK-YEON

KR19 patents
⚠️ This page may combine multiple inventors who share the name “WON BOK-YEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

18 patents
US10224093B2Mar 5, 2019

Sense amplifier having offset cancellation

SAMSUNG ELECTRONICS CO LTD19 citations93
US11127789B2Sep 21, 2021

Magnetic memory devices

SAMSUNG ELECTRONICS CO LTD9 citations83
US10803925B2Oct 13, 2020

Sense amplifier having offset cancellation

SAMSUNG ELECTRONICS CO LTD8 citations83
US10692565B2Jun 23, 2020

Sense amplifier having offset cancellation

SAMSUNG ELECTRONICS CO LTD5 citations83
US10262935B2Apr 16, 2019

Memory device and method of disposing conduction lines of the same

SAMSUNG ELECTRONICS CO LTD7 citations80
US11043257B2Jun 22, 2021

Sense amplifier having offset cancellation

SAMSUNG ELECTRONICS CO LTD2 citations72
US10541022B2Jan 21, 2020

Sense amplifier having offset cancellation

SAMSUNG ELECTRONICS CO LTD2 citations72
US9318169B2Apr 19, 2016

Bit line equalizing circuit

SAMSUNG ELECTRONICS CO LTD4 citations72
US11735248B2Aug 22, 2023

Sub-word-line drivers and semiconductor memory devices including the same

SAMSUNG ELECTRONICS CO LTD2 citations69
US11710518B2Jul 25, 2023

Sense amplifier having offset cancellation

SAMSUNG ELECTRONICS CO LTD0 citations62
US12279438B2Apr 15, 2025

Magnetic memory devices

SAMSUNG ELECTRONICS CO LTD0 citations60
US11770937B2Sep 26, 2023

Magnetic memory devices

SAMSUNG ELECTRONICS CO LTD0 citations60
US12451181B2Oct 21, 2025

Bitline sense amplifier with equalizing transistor and a memory device

SAMSUNG ELECTRONICS CO LTD0 citations59
US11961551B2Apr 16, 2024

Bitline sense amplifier and a memory device with an equalizer

SAMSUNG ELECTRONICS CO LTD1 citations59
US11776588B2Oct 3, 2023

Sense amplifier and semiconductor memory device including the sense amplifier

SAMSUNG ELECTRONICS CO LTD1 citations59
US12334140B2Jun 17, 2025

Semiconductor memory devices having adjustable I/O signal line loading that supports reduced power consumption during read and write operations

SAMSUNG ELECTRONICS CO LTD0 citations51
US12327584B2Jun 10, 2025

Bit line sense amplifier of semiconductor memory device and semiconductor memory device having the same

SAMSUNG ELECTRONICS CO LTD0 citations45
US10755765B2Aug 25, 2020

Layout structure of a bit line sense amplifier in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations38

PARK JONG-CHUL

1 patent