Inventor
WON BOK-YEON
KR19 patents
⚠️ This page may combine multiple inventors who share the name “WON BOK-YEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
18 patentsUS10224093B2Mar 5, 2019
Sense amplifier having offset cancellation
SAMSUNG ELECTRONICS CO LTD19 citations93
US11127789B2Sep 21, 2021
Magnetic memory devices
SAMSUNG ELECTRONICS CO LTD9 citations83
US10803925B2Oct 13, 2020
Sense amplifier having offset cancellation
SAMSUNG ELECTRONICS CO LTD8 citations83
US10692565B2Jun 23, 2020
Sense amplifier having offset cancellation
SAMSUNG ELECTRONICS CO LTD5 citations83
US10262935B2Apr 16, 2019
Memory device and method of disposing conduction lines of the same
SAMSUNG ELECTRONICS CO LTD7 citations80
US11043257B2Jun 22, 2021
Sense amplifier having offset cancellation
SAMSUNG ELECTRONICS CO LTD2 citations72
US10541022B2Jan 21, 2020
Sense amplifier having offset cancellation
SAMSUNG ELECTRONICS CO LTD2 citations72
US9318169B2Apr 19, 2016
Bit line equalizing circuit
SAMSUNG ELECTRONICS CO LTD4 citations72
US11735248B2Aug 22, 2023
Sub-word-line drivers and semiconductor memory devices including the same
SAMSUNG ELECTRONICS CO LTD2 citations69
US11710518B2Jul 25, 2023
Sense amplifier having offset cancellation
SAMSUNG ELECTRONICS CO LTD0 citations62
US12279438B2Apr 15, 2025
Magnetic memory devices
SAMSUNG ELECTRONICS CO LTD0 citations60
US11770937B2Sep 26, 2023
Magnetic memory devices
SAMSUNG ELECTRONICS CO LTD0 citations60
US12451181B2Oct 21, 2025
Bitline sense amplifier with equalizing transistor and a memory device
SAMSUNG ELECTRONICS CO LTD0 citations59
US11961551B2Apr 16, 2024
Bitline sense amplifier and a memory device with an equalizer
SAMSUNG ELECTRONICS CO LTD1 citations59
US11776588B2Oct 3, 2023
Sense amplifier and semiconductor memory device including the sense amplifier
SAMSUNG ELECTRONICS CO LTD1 citations59
US12334140B2Jun 17, 2025
Semiconductor memory devices having adjustable I/O signal line loading that supports reduced power consumption during read and write operations
SAMSUNG ELECTRONICS CO LTD0 citations51
US12327584B2Jun 10, 2025
Bit line sense amplifier of semiconductor memory device and semiconductor memory device having the same
SAMSUNG ELECTRONICS CO LTD0 citations45
US10755765B2Aug 25, 2020
Layout structure of a bit line sense amplifier in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations38