Inventor
Chen chang-yin
TW75 patents
⚠️ This page may combine multiple inventors who share the name “Chen chang-yin”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
49 patentsUS10262870B2Apr 16, 2019
Fin field effect transistor (FinFET) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US10854519B2Dec 1, 2020
Fin field effect transistor (FinFET) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10700180B2Jun 30, 2020
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10355135B2Jul 16, 2019
Semiconductor structure and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10312352B2Jun 4, 2019
Gate structure of field effect transistor with footing
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10096712B2Oct 9, 2018
FinFET device and method of forming and monitoring quality of the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10050128B2Aug 14, 2018
Gate structure of field effect transistor with footing
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9991285B2Jun 5, 2018
Mechanisms for forming FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9653605B2May 16, 2017
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9627375B2Apr 18, 2017
Indented gate end of non-planar transistor
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations84
US9620417B2Apr 11, 2017
Apparatus and method of manufacturing fin-FET devices
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9620621B2Apr 11, 2017
Gate structure of field effect transistor with footing
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9577067B2Feb 21, 2017
Metal gate and manufuacturing process thereof
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9520474B2Dec 13, 2016
Methods of forming a semiconductor device with a gate stack having tapered sidewalls
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10134861B2Nov 20, 2018
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US9508719B2Nov 29, 2016
Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11522084B2Dec 6, 2022
FinFET device and method of forming and monitoring quality of the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11380590B2Jul 5, 2022
Mechanisms for forming FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11328962B2May 10, 2022
Notched gate structure fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10840153B2Nov 17, 2020
Notched gate structure fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10818794B2Oct 27, 2020
Semiconductor structure and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10811536B2Oct 20, 2020
FinFET device and method of forming and monitoring quality of the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10672796B2Jun 2, 2020
Mechanisms for forming FINFET device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10535758B2Jan 14, 2020
Gate structure of field effect transistor with footing
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10269651B2Apr 23, 2019
Fin field effect transistor (FinFET) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10177238B2Jan 8, 2019
High-K film apparatus and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10164107B2Dec 25, 2018
Embedded source or drain region of transistor with laterally extended portion
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9773696B2Sep 26, 2017
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9627512B2Apr 18, 2017
Field effect transistor with non-doped channel
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9401415B2Jul 26, 2016
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11527636B2Dec 13, 2022
Semiconductor device structure with work function layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10763341B2Sep 1, 2020
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12125891B2Oct 22, 2024
Semiconductor device having gate spacers extending below a fin top surface
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US12408411B2Sep 2, 2025
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12261051B2Mar 25, 2025
Semiconductor device with fin isolation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12237417B2Feb 25, 2025
FinFET device and method of forming and monitoring quality of the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12211750B2Jan 28, 2025
Mechanisms for forming FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11973144B2Apr 30, 2024
Method of manufacturing a semiconductor and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11929419B2Mar 12, 2024
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11842932B2Dec 12, 2023
Notched gate structure fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11784055B2Oct 10, 2023
Method of forming semiconductor device with fin isolation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11276578B2Mar 15, 2022
Semiconductor device with fin isolation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11257931B2Feb 22, 2022
Gate structure of field effect transistor with footing
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11189728B2Nov 30, 2021
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11158545B2Oct 26, 2021
Methods of forming isolation features in metal gates
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11120974B2Sep 14, 2021
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12002871B2Jun 4, 2024
Semiconductor device structure with work function layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11854825B2Dec 26, 2023
Gate structure of semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11721762B2Aug 8, 2023
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
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