Inventor

LIN JR-JUNG

TW81 patents

⚠️ This page may combine multiple inventors who share the name “LIN JR-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIN JR-JUNG

TAIWAN SEMICONDUCTOR MFG CO LTD

Method and structure for FinFET isolation

Method and structure for FinFET isolation

Method and structure for FinFET isolation

Method and structure for FinFET isolation

Gate structure of field effect transistor with footing

Method and structure for FinFet isolation

Gate structure of field effect transistor with footing

Mechanisms for forming FinFET device

Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features

Indented gate end of non-planar transistor

Apparatus and method of manufacturing fin-FET devices

Gate structure of field effect transistor with footing

Integrated high-K/metal gate in CMOS process flow

Fin shape for fin field-effect transistors and method of forming

Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same

Method and structure for FinFET isolation

Mechanisms for forming FinFET device

FinFET structures and methods of forming the same

Mechanisms for forming FINFET device

Gate structure of field effect transistor with footing

FinFET structures and methods of forming the same

Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features

Semiconductor device including fin structures and manufacturing method therof

Semiconductor structure and manufacturing method thereof

Method of making a FinFET device

Semiconductor device including fin structures and manufacturing method thereof

Fin field effect transistor (FinFET) device and method for forming the same

Gate structure with desired profile for semiconductor devices

Mechanisms for forming FinFET device

Method and structure for FinFET isolation

Metal gate electrode of a semiconductor device

Gate structure of field effect transistor with footing

Semiconductor device

Method of making a FinFET device

FinFET structures and methods of forming the same

Gate last semiconductor structure and method for forming the same

Gate structure with non-linear profile for transistors

Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features

Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same

TAIWAN SEMICONDUCTOR MFG

Method of making a FinFET device

Fin shape for fin field-effect transistors and method of forming

Integrated high-K/metal gate in CMOS process flow

Integrated high-k/metal gate in CMOS process flow

Method of integrating high-K/metal gate in CMOS process flow

Dummy gate electrode of semiconductor device

Integrated high-k/metal gate in CMOS process flow

Solution for polymer and capping layer removing with wet dipping in HK metal gate etching process

LIN JR JUNG

Structure and method for MOSFETS with high-K and metal gate structure

LIN JR-JUNG

Dummy gate electrode of semiconductor device

LIN CHIH-HAN

Method of forming a semiconductor device