P

Inventor

TAILLIET FRANÇOIS

FR75 patents
⚠️ This page may combine multiple inventors who share the name “TAILLIET FRANÇOIS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ST MICROELECTRONICS ROUSSET

31 patents
US10727239B2Jul 28, 2020

Compact EEPROM memory cell with a gate dielectric layer having two different thicknesses

ST MICROELECTRONICS ROUSSET1 citations73
US10275173B2Apr 30, 2019

Non-volatile memory device having a memory size

ST MICROELECTRONICS ROUSSET4 citations73
US9978452B2May 22, 2018

Method for writing in an EEPROM memory and corresponding device

ST MICROELECTRONICS ROUSSET3 citations73
US11244893B2Feb 8, 2022

Low-dispersion component in an electronic chip

ST MICROELECTRONICS ROUSSET2 citations72
US10043741B2Aug 7, 2018

Low-dispersion component in an electronic chip

ST MICROELECTRONICS ROUSSET2 citations72
US12052861B2Jul 30, 2024

Compact EEPROM memory cell with a gate dielectric layer having two different thicknesses

ST MICROELECTRONICS ROUSSET0 citations63
US11892958B2Feb 6, 2024

Communication on an I2C bus

ST MICROELECTRONICS ROUSSET0 citations63
US11696438B2Jul 4, 2023

Compact EEPROM memory cell with a gate dielectric layer having two different thicknesses

ST MICROELECTRONICS ROUSSET0 citations63
US11303118B2Apr 12, 2022

Overvoltage protection

ST MICROELECTRONICS ROUSSET1 citations63
US10892321B2Jan 12, 2021

MOS transistors in parallel

ST MICROELECTRONICS ROUSSET0 citations63
US9245627B2Jan 26, 2016

Compact memory device including a SRAM memory plane and a non volatile memory plane, and operating methods

ST MICROELECTRONICS ROUSSET2 citations63
US12087683B2Sep 10, 2024

Low-dispersion component in an electronic chip

ST MICROELECTRONICS ROUSSET0 citations62
US11817149B2Nov 14, 2023

Non volatile static random access memory device and corresponding control method

ST MICROELECTRONICS ROUSSET0 citations62
US11488666B2Nov 1, 2022

Non volatile static random access memory device and corresponding control method

ST MICROELECTRONICS ROUSSET1 citations62
US11393537B2Jul 19, 2022

Compact non-volatile memory device

ST MICROELECTRONICS ROUSSET0 citations62
US11120878B2Sep 14, 2021

Method for writing in EEPROM memory and corresponding integrated circuit

ST MICROELECTRONICS ROUSSET0 citations62
US10403368B2Sep 3, 2019

Compact non-volatile memory device

ST MICROELECTRONICS ROUSSET1 citations62
US11003615B2May 11, 2021

Single-wire bus communication protocol

ST MICROELECTRONICS ROUSSET1 citations59
US11670385B2Jun 6, 2023

Method for writing an electrically erasable and programmable non volatile memory and corresponding integrated circuit

ST MICROELECTRONICS ROUSSET0 citations58
US11238944B2Feb 1, 2022

Method for writing an electrically erasable and programmable non volatile memory and corresponding integrated circuit

ST MICROELECTRONICS ROUSSET0 citations58
US10558609B2Feb 11, 2020

Apparatus for inter-integrated circuit (I2C) clock transmission channel wherein each filtering modules cooperates with the resistive circuit

ST MICROELECTRONICS ROUSSET1 citations58
US11811221B2Nov 7, 2023

Electrostatic discharge protection device

ST MICROELECTRONICS ROUSSET0 citations52
US11386963B2Jul 12, 2022

EEPROM memory device and corresponding method

ST MICROELECTRONICS ROUSSET0 citations52
US11127468B2Sep 21, 2021

Method for addressing a non-volatile memory on I2C bus and corresponding memory device

ST MICROELECTRONICS ROUSSET0 citations52
US10559575B2Feb 11, 2020

Non-volatile memory with restricted dimensions

ST MICROELECTRONICS ROUSSET0 citations52
US10446235B2Oct 15, 2019

Method for writing in an EEPROM memory and corresponding device

ST MICROELECTRONICS ROUSSET0 citations52
US10304524B2May 28, 2019

Semiconductor structure and memory device including the structure

ST MICROELECTRONICS ROUSSET0 citations52
US10199368B2Feb 5, 2019

Stucture for protecting an integrated circuit against electrostatic discharges

ST MICROELECTRONICS ROUSSET0 citations52
US10068644B2Sep 4, 2018

System and method for adjusting EEPROM write cycle duration according to supply voltage variation

ST MICROELECTRONICS ROUSSET0 citations52
US10013208B2Jul 3, 2018

Method for writing in an EEPROM memory and corresponding memory

ST MICROELECTRONICS ROUSSET1 citations52
US9899090B2Feb 20, 2018

Method for writing into and reading a multi-levels EEPROM and corresponding memory device

ST MICROELECTRONICS ROUSSET0 citations52

SGS THOMSON MICROELECTRONICS

8 patents

TAILLIET FRANÇOIS

6 patents

STMICROELECTRONICS ROUSSET

4 patents

BAS GILLES

1 patent

Showing the top 50 of 75 patents by PatentIndex Score.