Inventor
MOKU TETSUJI
JP12 patents
Patents
12 patentsUS7569870B2Aug 4, 2009
Gallium-nitride-based compound semiconductor device
SANKEN ELECTRIC CO LTD20 citations91
US7173311B2Feb 6, 2007
Light-emitting semiconductor device with a built-in overvoltage protector
SANKEN ELECTRIC CO LTD26 citations91
US7176480B2Feb 13, 2007
Light-emitting semiconductor device having a quantum well active layer, and method of fabrication
SANKEN ELECTRIC CO LTD26 citations90
US5814838ASep 29, 1998
Light emitting semiconductor element with ZN doping
SANKEN ELECTRIC CO LTD19 citations90
US7400000B2Jul 15, 2008
Nitride-based semiconductor device
SANKEN ELECTRIC CO LTD9 citations84
US7449727B2Nov 11, 2008
Overvoltage-protected light-emitting semiconductor device
SANKEN ELECTRIC CO LTD10 citations82
US6890791B2May 10, 2005
Compound semiconductor substrates and method of fabrication
SANKEN ELECTRIC CO LTD10 citations74
US6979844B2Dec 27, 2005
Light-emitting semiconductor device and method of fabrication
SANKEN ELECTRIC CO LTD7 citations72
US7675076B2Mar 9, 2010
Nitride-based semiconductor device of reduced voltage drop
SANKEN ELECTRIC CO LTD4 citations62
US7446342B2Nov 4, 2008
Light emitting diode having conductive reflecting layer
SANKEN ELECTRIC CO LTD2 citations60
US7202510B2Apr 10, 2007
Semiconductor luminescent device and manufacturing method thereof
SANKEN ELECTRIC CO LTD3 citations60
US7671375B2Mar 2, 2010
Nitride-based semiconductor device of reduced voltage drop, and method of fabrication
SANKEN ELECTRIC CO LTD1 citations52