Inventor

LAVROVSKAYA NATALIA

US19 patents

⚠️ This page may combine multiple inventors who share the name “LAVROVSKAYA NATALIA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LAVROVSKAYA NATALIA

TEXAS INSTRUMENTS INC

Method of improving lateral BJT characteristics in BCD technology

DMOS transistor having thick gate oxide and STI and method of fabricating

Transistor having an emitter region with a silicide spaced apart from a base contact

Bipolar junction transistor with constricted collector region having high gain and early voltage product

Bipolar junction transistor with constricted collector region having high gain and early voltage product

Fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region

DMOS transistor having thick gate oxide and STI and method of fabricating

Breakdown diodes and methods of making the same

Method of forming a biCMOS semiconductor chip that increases the betas of the bipolar transistors

Method of forming a BICMOS semiconductor chip that increases the betas of the bipolar transistors

Bipolar junction transistor with biased structure between base and emitter regions

NAT SEMICONDUCTOR CORP

Non-volatile memory cell with two capacitors and one PNP transistor and a method of forming such a cell in a 1-poly SOI technology

Heating element for enhanced E2PROM

Non-volatile memory cell with heating element

EEPROM structure with improved data retention utilizing biased metal plate and conductive layer exclusion

BABCOCK JEFFREY A

Non-volatile memory cell having a heating element and a substrate-based control gate

Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structures

Non-volatile memory cell having a heating element and a substrate-based control gate

BABCOCK JEFF A

Method of enhancing charge storage in an E2PROM cell