Inventor
ROEHRER GEORG
AT25 patents
⚠️ This page may combine multiple inventors who share the name “ROEHRER GEORG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AMS AG
12 patentsUS9935231B2Apr 3, 2018
Semiconductor element with a single photon avalanche diode and method for manufacturing such semiconductor element
AMS AG13 citations83
US11448730B2Sep 20, 2022
Optical sensor arrangement and method for manufacturing an optical sensor arrangement
AMS AG2 citations71
US10234332B2Mar 19, 2019
Bolometer and method for measurement of electromagnetic radiation
AMS AG5 citations70
US11081599B2Aug 3, 2021
Single photon avalanche diode and array of single photon avalanche diodes
AMS AG0 citations62
US11686826B2Jun 27, 2023
Measuring time-of-flight using a plurality of detector subsystems and histogram storage
AMS AG0 citations60
US11039515B2Jun 15, 2021
Light emitting semiconductor device for generation of short light pulses
AMS AG1 citations59
US10510881B2Dec 17, 2019
Method of producing a symmetric LDMOS transistor
AMS AG0 citations51
US10283635B2May 7, 2019
Field effect transistor device with separate source and body contacts and method of producing the device
AMS AG0 citations51
US9876095B2Jan 23, 2018
High-voltage transistor with high current load capacity and method for its production
AMS AG0 citations51
US11885726B2Jan 30, 2024
Particulate matter sensor
AMS AG0 citations48
US11047934B2Jun 29, 2021
Hall sensor
AMS AG0 citations38
US9684038B2Jun 20, 2017
Magnetic field sensor system
AMS AG0 citations32
AUSTRIAMICROSYSTEMS AG
5 patentsUS7566624B2Jul 28, 2009
Method for the production of transistor structures with LDD
AUSTRIAMICROSYSTEMS AG8 citations78
US7319251B2Jan 15, 2008
Bipolar transistor
AUSTRIAMICROSYSTEMS AG2 citations62
US7863170B2Jan 4, 2011
Semiconductor body comprising a transistor structure and method for producing a transistor structure
AUSTRIAMICROSYSTEMS AG6 citations59
US7977197B2Jul 12, 2011
Method for fabricating a transistor with reliable source doping
AUSTRIAMICROSYSTEMS AG1 citations51
US7629628B2Dec 8, 2009
Bipolar transistor including a base layer containing carbon atoms and having three distinct layers being doped with a trivalent substance
AUSTRIAMICROSYSTEMS AG0 citations50
ROEHRER GEORG
3 patentsUS8836026B2Sep 16, 2014
High-voltage transistor having multiple dielectrics and production method
ROEHRER GEORG4 citations70
US8399937B2Mar 19, 2013
Semiconductor body and method for the design of a semiconductor body with a connecting line
ROEHRER GEORG2 citations60
US8273621B2Sep 25, 2012
MOS-FET having a channel connection, and method for the production of a MOS-FET having a channel connection
ROEHRER GEORG0 citations49