Inventor
KANG BYUNG-JAE
KR3 patents
Patents
3 patentsUS10930544B2Feb 23, 2021
Method of manufacturing semiconductor device having buried gate electrodes
SAMSUNG ELECTRONICS CO LTD2 citations68
US11670537B2Jun 6, 2023
Method of manufacturing semiconductor device having buried gate electrodes
SAMSUNG ELECTRONICS CO LTD0 citations57
US12446267B2Oct 14, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52