P

Inventor

KIM BYUNG HEE

KR93 patents
⚠️ This page may combine multiple inventors who share the name “KIM BYUNG HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

38 patents
US6815285B2Nov 9, 2004

Methods of forming dual gate semiconductor devices having a metal nitride layer

SAMSUNG ELECTRONICS CO LTD147 citations99
US6391769B1May 21, 2002

Method for forming metal interconnection in semiconductor device and interconnection structure fabricated thereby

SAMSUNG ELECTRONICS CO LTD177 citations99
US6144060ANov 7, 2000

Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature

SAMSUNG ELECTRONICS CO LTD457 citations99
US6229166B1May 8, 2001

Ferroelectric random access memory device and fabrication method therefor

SAMSUNG ELECTRONICS CO LTD66 citations96
US7148100B2Dec 12, 2006

Methods of forming electronic devices including high-k dielectric layers and electrode barrier layers

SAMSUNG ELECTRONICS CO LTD30 citations93
US6787468B2Sep 7, 2004

Method of fabricating metal lines in a semiconductor device

SAMSUNG ELECTRONICS CO LTD40 citations93
US6697122B2Feb 24, 2004

Apparatus for adaptively processing an externally input video signal in digital television

SAMSUNG ELECTRONICS CO LTD21 citations93
US6432820B1Aug 13, 2002

Method of selectively depositing a metal layer in an opening in a dielectric layer by forming a metal-deposition-prevention layer around the opening of the dielectric layer

SAMSUNG ELECTRONICS CO LTD43 citations93
US7098131B2Aug 29, 2006

Methods for forming atomic layers and thin films including tantalum nitride and devices including the same

SAMSUNG ELECTRONICS CO LTD48 citations92
US6849555B2Feb 1, 2005

Wafer processing apparatus and wafer processing method using the same

SAMSUNG ELECTRONICS CO LTD15 citations92
US6586340B2Jul 1, 2003

Wafer processing apparatus and wafer processing method using the same

SAMSUNG ELECTRONICS CO LTD19 citations92
US5879982AMar 9, 1999

Methods of forming integrated circuit memory devices having improved electrical interconnects therein

SAMSUNG ELECTRONICS CO LTD38 citations91
US7749840B2Jul 6, 2010

Methods of forming a semiconductor device including buried bit line

SAMSUNG ELECTRONICS CO LTD9 citations84
US7244645B2Jul 17, 2007

Methods of forming electronic devices including high-k dielectric layers and electrode barrier layers and related structures

SAMSUNG ELECTRONICS CO LTD10 citations84
US7067420B2Jun 27, 2006

Methods for forming a metal layer on a semiconductor

SAMSUNG ELECTRONICS CO LTD12 citations84
US6602782B2Aug 5, 2003

Methods for forming metal wiring layers and metal interconnects and metal interconnects formed thereby

SAMSUNG ELECTRONICS CO LTD18 citations84
US10199263B2Feb 5, 2019

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations82
US7846796B2Dec 7, 2010

Semiconductor devices including buried bit lines

SAMSUNG ELECTRONICS CO LTD6 citations74
US7638433B2Dec 29, 2009

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US6929956B2Aug 16, 2005

Ferroelectric random access memory device and fabrication method therefor

SAMSUNG ELECTRONICS CO LTD7 citations74
US10867923B2Dec 15, 2020

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations73
US10388563B2Aug 20, 2019

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations73
US10008407B2Jun 26, 2018

Methods of manufacturing semiconductor devices including conductive structures

SAMSUNG ELECTRONICS CO LTD4 citations73
US8963332B2Feb 24, 2015

Semiconductor device with dummy lines

SAMSUNG ELECTRONICS CO LTD5 citations73
US6955983B2Oct 18, 2005

Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer

SAMSUNG ELECTRONICS CO LTD9 citations73
US10700164B2Jun 30, 2020

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD1 citations72
US10304734B2May 28, 2019

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US10217820B2Feb 26, 2019

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD1 citations72
US10062609B2Aug 28, 2018

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US9812450B2Nov 7, 2017

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations72
US9728604B2Aug 8, 2017

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD3 citations72
US10128148B2Nov 13, 2018

Methods for fabricating semiconductor devices including surface treatment processes

SAMSUNG ELECTRONICS CO LTD4 citations71
US9812353B2Nov 7, 2017

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US9773699B2Sep 26, 2017

Methods of forming wiring structures including a plurality of metal layers

SAMSUNG ELECTRONICS CO LTD2 citations70
US10418326B2Sep 17, 2019

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations69
US7998810B2Aug 16, 2011

Methods of forming integrated circuit devices having stacked gate electrodes

SAMSUNG ELECTRONICS CO LTD2 citations63
US7968410B2Jun 28, 2011

Method of fabricating a semiconductor device using a full silicidation process

SAMSUNG ELECTRONICS CO LTD2 citations63
US7759263B2Jul 20, 2010

Methods for fabricating improved gate dielectrics

SAMSUNG ELECTRONICS CO LTD5 citations63

SAMSUNG DISPLAY DEVICES CO LTD

4 patents

SAMSUNG MOBILE DISPLAY CO LTD

3 patents

LG ELECTRONICS INC

2 patents

HAN KYU-HEE

1 patent

SAMSUNG SDI CO LTD

1 patent

JUNG EUN-JI

1 patent

Showing the top 50 of 93 patents by PatentIndex Score.