Inventor

KANG SANG BOM

KR52 patents

⚠️ This page may combine multiple inventors who share the name “KANG SANG BOM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANG SANG BOM

SAMSUNG ELECTRONICS CO LTD

Method of manufacturing a barrier metal layer using atomic layer deposition

Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same

Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same

Method for forming metal layer using atomic layer deposition

Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device

High dielectric film and related method of manufacture

Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors

Method of delivering gas into reaction chamber and shower head used to deliver gas

Method for forming metal layer of semiconductor device using metal halide gas

Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor

Methods of producing integrated circuit devices utilizing tantalum amine derivatives

Methods of forming silicide films with metal films in semiconductor devices and contacts including the same

Methods for forming atomic layers and thin films including tantalum nitride and devices including the same

Methods of producing integrated circuit devices utilizing tantalum amine derivatives

Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same

Method of manufacturing a semiconductor device having a dual gate structure

Methods of forming cobalt layers for semiconductor devices

Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same

Methods of fabricating semiconductor devices

Methods of forming metal wiring in semiconductor devices using etch stop layers

Semiconductor device

Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same

Semiconductor devices having metal containing N-type and P-type gate electrodes and methods of forming the same

Integrated circuit devices having self-aligned contact structures

Memory devices and methods of manufacturing the same

Semiconductor devices

Semiconductor devices

Semiconductor device

Semiconductor devices having transistors with different gate structures and methods of fabricating the same

Semiconductor device having metal gate patterns and related method of manufacture

Methods of forming a metal layer using transition metal precursors

Methods of fabricating semiconductor devices having transistors with different gate structures

Methods of manufacturing a thin film including hafnium titanium oxide and methods of manufacturing a semiconductor device including the same

Methods of fabricating integrated circuit devices having self-aligned contact structures

Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed

Methods of fabricating semiconductor devices using MOS transistors with nonuniform gate electrode structures

Methods of forming devices including different gate insulating layers on PMOS/NMOS regions

Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the same

LEE JUNG-CHAN

Transistor structure of a semiconductor device

Method of manufacturing semiconductor device

LEE SEUNG-HUN

Methods of manufacturing semiconductor devices

Semiconductor devices

SHIN CHUNG HWAN

Semiconductor devices with shaped portions of elevated source/drain regions

Semiconductor devices with shaped portions of elevated source/drain regions

KIM SEOK-HOON

Methods of forming transistors and CMOS semiconductor devices using an SMT technique

NA HOON-JOO

Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devices

SHIN CHUNG-HWAN

Methods of forming semiconductor devices with metal silicide using pre-amorphization implants

PARK HEUNG-KYU

Non-volatile memory devices having resistance changeable elements and related systems and methods

LIM KWAN-YONG

Method for manufacturing semiconductor device

LEE KWAN-HEUM

Methods of manufacturing semiconductor devices