Inventor
JUNG EUN JI
KR41 patents
⚠️ This page may combine multiple inventors who share the name “JUNG EUN JI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
36 patentsUS7432185B2Oct 7, 2008
Method of forming semiconductor device having stacked transistors
SAMSUNG ELECTRONICS CO LTD183 citations99
US7381989B2Jun 3, 2008
Semiconductor device including upper and lower transistors and interconnection between upper and lower transistors
SAMSUNG ELECTRONICS CO LTD182 citations99
US7687331B2Mar 30, 2010
Stacked semiconductor device and method of fabrication
SAMSUNG ELECTRONICS CO LTD54 citations98
US7214620B2May 8, 2007
Methods of forming silicide films with metal films in semiconductor devices and contacts including the same
SAMSUNG ELECTRONICS CO LTD26 citations92
US7749840B2Jul 6, 2010
Methods of forming a semiconductor device including buried bit line
SAMSUNG ELECTRONICS CO LTD9 citations84
US7846796B2Dec 7, 2010
Semiconductor devices including buried bit lines
SAMSUNG ELECTRONICS CO LTD6 citations74
US7833847B2Nov 16, 2010
Method of forming semiconductor device having stacked transistors
SAMSUNG ELECTRONICS CO LTD5 citations74
US7435634B2Oct 14, 2008
Methods of forming semiconductor devices having stacked transistors
SAMSUNG ELECTRONICS CO LTD8 citations74
US10388563B2Aug 20, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations73
US10700164B2Jun 30, 2020
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations72
US10304734B2May 28, 2019
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10217820B2Feb 26, 2019
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations72
US10062609B2Aug 28, 2018
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US9728604B2Aug 8, 2017
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations72
US11270944B2Mar 8, 2022
Semiconductor device having interconnection lines with different linewidths and metal patterns
SAMSUNG ELECTRONICS CO LTD3 citations71
US9773699B2Sep 26, 2017
Methods of forming wiring structures including a plurality of metal layers
SAMSUNG ELECTRONICS CO LTD2 citations70
US10418326B2Sep 17, 2019
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations69
US7998810B2Aug 16, 2011
Methods of forming integrated circuit devices having stacked gate electrodes
SAMSUNG ELECTRONICS CO LTD2 citations63
US7968410B2Jun 28, 2011
Method of fabricating a semiconductor device using a full silicidation process
SAMSUNG ELECTRONICS CO LTD2 citations63
US7936024B2May 3, 2011
Semiconductor devices having stacked structures
SAMSUNG ELECTRONICS CO LTD3 citations63
US7416968B2Aug 26, 2008
Methods of forming field effect transistors having metal silicide gate electrodes
SAMSUNG ELECTRONICS CO LTD2 citations63
US12199042B2Jan 14, 2025
Semiconductor device having interconnection lines with different linewidths and metal patterns
SAMSUNG ELECTRONICS CO LTD0 citations60
US12400911B2Aug 26, 2025
Semiconductor device and method for fabricating thereof
SAMSUNG ELECTRONICS CO LTD0 citations59
US7560331B2Jul 14, 2009
Method for forming a silicided gate
SAMSUNG ELECTRONICS CO LTD2 citations59
US11967554B2Apr 23, 2024
Semiconductor devices and methods for manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations58
US11587867B2Feb 21, 2023
Semiconductor devices and methods for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations58
US11942427B2Mar 26, 2024
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations57
US11450607B2Sep 20, 2022
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations57
US9991203B2Jun 5, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7662707B2Feb 16, 2010
Method of forming relatively continuous silicide layers for semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US7579225B2Aug 25, 2009
Method of forming semiconductor device having stacked transistors
SAMSUNG ELECTRONICS CO LTD0 citations52
US7531459B2May 12, 2009
Methods of forming self-aligned silicide layers using multiple thermal processes
SAMSUNG ELECTRONICS CO LTD0 citations52
US12456650B2Oct 28, 2025
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US7867898B2Jan 11, 2011
Method forming ohmic contact layer and metal wiring in semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations42
US7897500B2Mar 1, 2011
Methods for forming silicide conductors using substrate masking
SAMSUNG ELECTRONICS CO LTD0 citations41
US7569483B2Aug 4, 2009
Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatus
SAMSUNG ELECTRONICS CO LTD0 citations41