P

Inventor

KROUNBI MOHAMAD TOWFIK

US49 patents
⚠️ This page may combine multiple inventors who share the name “KROUNBI MOHAMAD TOWFIK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

17 patents
US9130155B2Sep 8, 2015

Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions

SAMSUNG ELECTRONICS CO LTD59 citations98
US9460397B2Oct 4, 2016

Quantum computing device spin transfer torque magnetic memory

SAMSUNG ELECTRONICS CO LTD28 citations94
US9105830B2Aug 11, 2015

Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions

SAMSUNG ELECTRONICS CO LTD21 citations92
US10283701B1May 7, 2019

Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctions

SAMSUNG ELECTRONICS CO LTD17 citations85
US9076954B2Jul 7, 2015

Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices

SAMSUNG ELECTRONICS CO LTD15 citations84
US9972773B1May 15, 2018

Method and system for providing magnetic junctions utilizing high crystallization temperature-containing insertion layer(s)

SAMSUNG ELECTRONICS CO LTD2 citations70
US9876164B1Jan 23, 2018

Method and system for providing a low moment free layer magnetic junction usable in spin transfer torque applications

SAMSUNG ELECTRONICS CO LTD4 citations70
US11251366B2Feb 15, 2022

Oxide interlayers containing glass-forming agents

SAMSUNG ELECTRONICS CO LTD1 citations62
US10553642B2Feb 4, 2020

Method and system for providing magnetic junctions utilizing metal oxide layer(s)

SAMSUNG ELECTRONICS CO LTD1 citations60
US11063209B2Jul 13, 2021

Method and system for providing magnetic junctions utilizing oxygen blocking, oxygen adsorber and tuning layer(s)

SAMSUNG ELECTRONICS CO LTD0 citations51
US9917249B2Mar 13, 2018

Method and system for providing a magnetic junction usable in spin transfer torque applications and including a magnetic barrier layer

SAMSUNG ELECTRONICS CO LTD0 citations51
US9941467B1Apr 10, 2018

Method and system for providing a low moment CoFeBMo free layer magnetic junction usable in spin transfer torque applications

SAMSUNG ELECTRONICS CO LTD0 citations49
US10438638B2Oct 8, 2019

Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer or spin orbit torque applications using a sacrificial oxide layer

SAMSUNG ELECTRONICS CO LTD0 citations41
US10276225B2Apr 30, 2019

Method and system for providing a magnetic junction usable in spin transfer or spin-orbit torque applications and including a magnetic barrier layer

SAMSUNG ELECTRONICS CO LTD0 citations41
US9966528B2May 8, 2018

Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer torque applications using a sacrificial oxide layer

SAMSUNG ELECTRONICS CO LTD0 citations41
US10297301B2May 21, 2019

Method and system for providing magnetic junctions utilizing high crystallization temperature-containing insertion layer(s)

SAMSUNG ELECTRONICS CO LTD0 citations39
US10164175B2Dec 25, 2018

Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositions

SAMSUNG ELECTRONICS CO LTD0 citations38

IBM

14 patents
US5805391ASep 8, 1998

Write head with recessed stitched yoke on a planar portion of an insulation layer defining zero throat height

IBM124 citations98
US5757591AMay 26, 1998

Magnetoresistive read/inductive write magnetic head assembly fabricated with silicon on hard insulator for improved durability and electrostatic discharge protection and method for manufacturing same

IBM43 citations94
US5664316ASep 9, 1997

Method of manufacturing magnetoresistive read transducer having a contiguous longitudinal bias layer

IBM57 citations93
US6239955B1May 29, 2001

Stabilized MR sensor and heat guide joined by contiguous junction

IBM22 citations92
US6181532B1Jan 30, 2001

Stabilized MR sensor and flux/heat guide joined by contiguous junction

IBM16 citations92
US6029339AFeb 29, 2000

Method of making write head with recessed stitched yoke on a planar portion of an insulation layer defining zero throat height

IBM34 citations92
US5930084AJul 27, 1999

Stabilized MR sensor and flux guide joined by contiguous junction

IBM25 citations92
US5893981AApr 13, 1999

Method of making stabilized MR sensor and flux guide joined by contiguous junction

IBM29 citations92
US5768070AJun 16, 1998

Horizontal thin film write, MR read head

IBM19 citations92
US5926349AJul 20, 1999

Simplified magnetic head with common write gap/first insulation layer

IBM13 citations81
US5779923AJul 14, 1998

Simplified method of making merged MR head

IBM13 citations81
US5700380ADec 23, 1997

Simplified method of making vias for merged MR head

IBM15 citations81
US6038110AMar 14, 2000

Dual header tape head design

IBM12 citations70
US6456449B1Sep 24, 2002

Disk drive with wide servo burst pattern and wide servo sensing element

IBM8 citations69

APALKOV DMYTRO

5 patents

HITACHI GLOBAL STORAGE TECH

5 patents

KROUNBI MOHAMAD TOWFIK

2 patents

HITACHI GLOBAL TECHNOLOGIES

1 patent

PARK CHANG-MAN

1 patent

ONG ADRIAN E

1 patent

KHVALKOVSKIY ALEXEY VASILYEVITCH

1 patent

WATTS STEVEN M

1 patent

MOON KISEOK

1 patent