Inventor
KROUNBI MOHAMAD TOWFIK
US49 patents
⚠️ This page may combine multiple inventors who share the name “KROUNBI MOHAMAD TOWFIK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS9130155B2Sep 8, 2015
Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions
SAMSUNG ELECTRONICS CO LTD59 citations98
US9460397B2Oct 4, 2016
Quantum computing device spin transfer torque magnetic memory
SAMSUNG ELECTRONICS CO LTD28 citations94
US9105830B2Aug 11, 2015
Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions
SAMSUNG ELECTRONICS CO LTD21 citations92
US10283701B1May 7, 2019
Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctions
SAMSUNG ELECTRONICS CO LTD17 citations85
US9076954B2Jul 7, 2015
Method and system for providing magnetic memories switchable using spin accumulation and selectable using magnetoelectric devices
SAMSUNG ELECTRONICS CO LTD15 citations84
US9972773B1May 15, 2018
Method and system for providing magnetic junctions utilizing high crystallization temperature-containing insertion layer(s)
SAMSUNG ELECTRONICS CO LTD2 citations70
US9876164B1Jan 23, 2018
Method and system for providing a low moment free layer magnetic junction usable in spin transfer torque applications
SAMSUNG ELECTRONICS CO LTD4 citations70
US11251366B2Feb 15, 2022
Oxide interlayers containing glass-forming agents
SAMSUNG ELECTRONICS CO LTD1 citations62
US10553642B2Feb 4, 2020
Method and system for providing magnetic junctions utilizing metal oxide layer(s)
SAMSUNG ELECTRONICS CO LTD1 citations60
US11063209B2Jul 13, 2021
Method and system for providing magnetic junctions utilizing oxygen blocking, oxygen adsorber and tuning layer(s)
SAMSUNG ELECTRONICS CO LTD0 citations51
US9917249B2Mar 13, 2018
Method and system for providing a magnetic junction usable in spin transfer torque applications and including a magnetic barrier layer
SAMSUNG ELECTRONICS CO LTD0 citations51
US9941467B1Apr 10, 2018
Method and system for providing a low moment CoFeBMo free layer magnetic junction usable in spin transfer torque applications
SAMSUNG ELECTRONICS CO LTD0 citations49
US10438638B2Oct 8, 2019
Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer or spin orbit torque applications using a sacrificial oxide layer
SAMSUNG ELECTRONICS CO LTD0 citations41
US10276225B2Apr 30, 2019
Method and system for providing a magnetic junction usable in spin transfer or spin-orbit torque applications and including a magnetic barrier layer
SAMSUNG ELECTRONICS CO LTD0 citations41
US9966528B2May 8, 2018
Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer torque applications using a sacrificial oxide layer
SAMSUNG ELECTRONICS CO LTD0 citations41
US10297301B2May 21, 2019
Method and system for providing magnetic junctions utilizing high crystallization temperature-containing insertion layer(s)
SAMSUNG ELECTRONICS CO LTD0 citations39
US10164175B2Dec 25, 2018
Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositions
SAMSUNG ELECTRONICS CO LTD0 citations38
IBM
14 patentsUS5805391ASep 8, 1998
Write head with recessed stitched yoke on a planar portion of an insulation layer defining zero throat height
IBM124 citations98
US5757591AMay 26, 1998
Magnetoresistive read/inductive write magnetic head assembly fabricated with silicon on hard insulator for improved durability and electrostatic discharge protection and method for manufacturing same
IBM43 citations94
US5664316ASep 9, 1997
Method of manufacturing magnetoresistive read transducer having a contiguous longitudinal bias layer
IBM57 citations93
US6239955B1May 29, 2001
Stabilized MR sensor and heat guide joined by contiguous junction
IBM22 citations92
US6181532B1Jan 30, 2001
Stabilized MR sensor and flux/heat guide joined by contiguous junction
IBM16 citations92
US6029339AFeb 29, 2000
Method of making write head with recessed stitched yoke on a planar portion of an insulation layer defining zero throat height
IBM34 citations92
US5930084AJul 27, 1999
Stabilized MR sensor and flux guide joined by contiguous junction
IBM25 citations92
US5893981AApr 13, 1999
Method of making stabilized MR sensor and flux guide joined by contiguous junction
IBM29 citations92
US5768070AJun 16, 1998
Horizontal thin film write, MR read head
IBM19 citations92
US5926349AJul 20, 1999
Simplified magnetic head with common write gap/first insulation layer
IBM13 citations81
US5779923AJul 14, 1998
Simplified method of making merged MR head
IBM13 citations81
US5700380ADec 23, 1997
Simplified method of making vias for merged MR head
IBM15 citations81
US6038110AMar 14, 2000
Dual header tape head design
IBM12 citations70
US6456449B1Sep 24, 2002
Disk drive with wide servo burst pattern and wide servo sensing element
IBM8 citations69
APALKOV DMYTRO
5 patentsUS8766383B2Jul 1, 2014
Method and system for providing a magnetic junction using half metallic ferromagnets
APALKOV DMYTRO10 citations84
US8399941B2Mar 19, 2013
Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements
APALKOV DMYTRO9 citations84
US8890267B2Nov 18, 2014
Method and system for providing magnetic junctions having a graded magnetic free layer
APALKOV DMYTRO4 citations73
US8697484B2Apr 15, 2014
Method and system for setting a pinned layer in a magnetic tunneling junction
APALKOV DMYTRO2 citations62
US9142758B2Sep 22, 2015
Method and system for providing a magnetic junction configured for precessional switching using a bias structure
APALKOV DMYTRO0 citations52
HITACHI GLOBAL STORAGE TECH
5 patentsUS6925702B2Aug 9, 2005
Method of making a horizontal thin film write and read head
HITACHI GLOBAL STORAGE TECH10 citations73
US6722019B1Apr 20, 2004
Method of making horizontal thin film write, MR read head
HITACHI GLOBAL STORAGE TECH9 citations73
US7433163B2Oct 7, 2008
Seedlayer for high hard bias layer coercivity
HITACHI GLOBAL STORAGE TECH4 citations63
US7213326B2May 8, 2007
Method of manufacturing a horizontal thin film write, MR read head
HITACHI GLOBAL STORAGE TECH0 citations51
US7100268B2Sep 5, 2006
Method of making a magnetic head
HITACHI GLOBAL STORAGE TECH0 citations51