Inventor

TSANG CHING HWA

US50 patents

⚠️ This page may combine multiple inventors who share the name “TSANG CHING HWA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TSANG CHING HWA

HITACHI GLOBAL STORAGE TECH

Magnetic tunnel junction device with bottom free layer and improved underlayer

Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges

Current perpendicular to plane magnetoresistive sensor having a shape enhanced pinned layer and an in stack bias structure

Magnetoresistive sensor having a shape enhanced pinned layer

Read sensor having an in-stack biasing structure and an AP coupled free layer structure for increased magnetic stability

Planar perpendicular recording head

High linear density tunnel junction flux guide read head with in-stack longitudinal bias stack (LBS)

Magnetoresistive sensor having an enhanced lead overlay design and shape enhanced pinning

Three-dimensional magnetic memory having bits transferrable between storage layers

Self-pinned read sensor design with enhanced lead stabilizing mechanism

Magnetoresistive sensor having a shape enhanced pinned layer

Critically exposed lapping of magnetic sensors for target signal output

High linear density tunnel junction flux guide read head with in-stack longitudinal bias stack (LBS)

Magnetic recording disk drive having read head with high cross-track resolution and disk with low bit-aspect-ratio

Notched shield and pole structure with slanted wing for perpendicular recording

Double notched shield and pole structure for stray field reduction in a magnetic head

Three-dimensional magnetic memory

Magnetic sensor with extended free layer and overlaid leads

Winged design for reducing corner stray magnetic fields

Method of fabricating a thin film magnetic sensor on a wafer

Planar magnetic thin film head

Magnetic read head with dual layer lead

Read/write elements for a three-dimensional magnetic memory

Magnetoresistive sensor with overlaid combined leads and shields

Magnetoresistive sensor having biasing AFM layer in contact with free layer and a track width defined by a lead contact area

IBM

Magnetic tunnel junction magnetoresistive sensor with in-stack biasing

Shielded magnetic tunnel junction magnetoresistive read head

Magnetic tunnel junction magnetoresistive read head with sensing layer as rear flux guide

Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide

Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell

Magnetic tunnel junction magnetoresistive read head with longitudinal and transverse bias

Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer, and magnetic recording system using the sensor

Method of making read/write magnetoresistive (MR) head with sunken components

Method of manufacturing magnetoresistive read transducer having a contiguous longitudinal bias layer

Magnetoresistive read transducer

Fully-pinned, flux-closed spin valve

In-stack longitudinal bias structure for CIP spin valve sensors with bias layer electrically insulated from free layer

Combined magnetoresistive (MR) read and inductive write head with sunken write coil

Method of manufacturing a current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions

Thin film magnetic recording inductive write head with laminated write gap

MR sensor having end regions with planar sides

Magnetoresistive sensor employing an exchange-bias enhancing layer

Magnetoresistive sensor employing an exchange-bias enhancing layer with a variable-composition transition region

Thin film magnetic recording inductive write head with laminated write gap

Self-longitudinally biased magnetoresistive read transducer

HONG YING

Low resistance tunnel magnetoresistance (TMR) structure

Read transducer and magnetic storage system implementing same

SANDISK TECHNOLOGIES LLC

Spin orbit torque MRAM memory cell with enhanced thermal stability

HGST Netherlands BV

TMR/CPP reader for narrow reader gap application

HITACHI GLOBAL STORAGE TECH NL

Three-dimensional magnetic memory