Inventor
CHOI HUN-DAE
KR28 patents
⚠️ This page may combine multiple inventors who share the name “CHOI HUN-DAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
26 patentsUS10354704B2Jul 16, 2019
Semiconductor memory device and memory system
SAMSUNG ELECTRONICS CO LTD7 citations84
US9998121B2Jun 12, 2018
Output buffer circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US9088287B2Jul 21, 2015
Divided clock generation device and divided clock generation method
SAMSUNG ELECTRONICS CO LTD8 citations83
US10530371B2Jan 7, 2020
Delay locked loop to cancel offset and memory device including the same
SAMSUNG ELECTRONICS CO LTD8 citations81
US10320398B2Jun 11, 2019
Delay locked loop to cancel offset and memory device including the same
SAMSUNG ELECTRONICS CO LTD5 citations81
US10276220B2Apr 30, 2019
ZQ calibration method of memory device with shared ZQ pin and memory device performing the ZQ calibration method
SAMSUNG ELECTRONICS CO LTD11 citations81
US10069495B2Sep 4, 2018
Semiconductor memory device for calibrating a termination resistance and a method of calibrating the termination resistance thereof
SAMSUNG ELECTRONICS CO LTD8 citations81
US10748585B2Aug 18, 2020
Calibration circuit including common node shared by pull-up calibration path and pull-down calibration path, and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US10141931B2Nov 27, 2018
Memory device, memory system including the same, and slew rate calibration method thereof
SAMSUNG ELECTRONICS CO LTD4 citations73
US10014043B2Jul 3, 2018
Memory device having command window generator
SAMSUNG ELECTRONICS CO LTD2 citations72
US9590628B2Mar 7, 2017
Reference voltage training device and method thereof
SAMSUNG ELECTRONICS CO LTD6 citations72
US9978460B2May 22, 2018
Memory module including on-die termination circuit and control method thereof
SAMSUNG ELECTRONICS CO LTD4 citations71
US10600458B2Mar 24, 2020
Memory device and method of operating the same for latency control
SAMSUNG ELECTRONICS CO LTD3 citations70
US9847113B2Dec 19, 2017
Delay-locked loop circuit and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD5 citations70
US10727826B2Jul 28, 2020
Delay-locked loop circuit, semiconductor memory device, and methods of operating delay-locked loop circuit
SAMSUNG ELECTRONICS CO LTD2 citations64
US8345492B2Jan 1, 2013
Memory controller for detecting read latency, memory system and test system having the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US11651813B2May 16, 2023
Clock correction circuit and memory system comprising the clock correction circuit
SAMSUNG ELECTRONICS CO LTD1 citations59
US11342011B2May 24, 2022
Semiconductor memory device and operating method of semiconductor memory device to reduce duty errors
SAMSUNG ELECTRONICS CO LTD1 citations59
US10878869B2Dec 29, 2020
Memory device including common mode extractor
SAMSUNG ELECTRONICS CO LTD1 citations59
US11888489B2Jan 30, 2024
Delay locked loop including replica fine delay circuit and memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations56
US10923181B2Feb 16, 2021
Semiconductor memory device and memory system having the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US10861516B2Dec 8, 2020
Semiconductor memory device and operating method of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations49
US10491223B2Nov 26, 2019
Memory device including a delay locked loop and operating method of the memory device
SAMSUNG ELECTRONICS CO LTD0 citations49
US10283176B2May 7, 2019
Delay-locked loop circuit and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US10367490B2Jul 30, 2019
Electronic circuits for outputting post emphasis signals
SAMSUNG ELECTRONICS CO LTD0 citations45
US9830972B2Nov 28, 2017
Semiconductor device and semiconductor system
SAMSUNG ELECTRONICS CO LTD0 citations33