Inventor
LIN SHENG-HAO
TW26 patents
⚠️ This page may combine multiple inventors who share the name “LIN SHENG-HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
24 patentsUS10008578B1Jun 26, 2018
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP17 citations94
US9502519B2Nov 22, 2016
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP19 citations92
US10714607B1Jul 14, 2020
High electron mobility transistor
UNITED MICROELECTRONICS CORP10 citations83
US10068963B2Sep 4, 2018
Fin-type field effect transistor and method of forming the same
UNITED MICROELECTRONICS CORP7 citations83
US6248641B1Jun 19, 2001
Method of fabricating shallow trench isolation
UNITED MICROELECTRONICS CORP15 citations81
US10923586B2Feb 16, 2021
High electron mobility transistor (HEMT)
UNITED MICROELECTRONICS CORP4 citations72
US9871102B2Jan 16, 2018
Method of forming a single-crystal nanowire finFET
UNITED MICROELECTRONICS CORP4 citations72
US9666687B1May 30, 2017
Method for forming semiconductor structure
UNITED MICROELECTRONICS CORP3 citations72
US9508834B1Nov 29, 2016
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP5 citations72
US9281400B1Mar 8, 2016
Method of fabricating a semiconductor device with fin-shaped structures
UNITED MICROELECTRONICS CORP3 citations72
US11843046B2Dec 12, 2023
High electron mobility transistor (HEMT)
UNITED MICROELECTRONICS CORP0 citations62
US6544849B2Apr 8, 2003
Method of fabricating semiconductor device for preventing polysilicon line being damaged during removal of photoresist
UNITED MICROELECTRONICS CORP4 citations62
US6635537B2Oct 21, 2003
Method of fabricating gate oxide
UNITED MICROELECTRONICS CORP6 citations59
US10211311B2Feb 19, 2019
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations52
US9954082B1Apr 24, 2018
Method of fabricating an embedded nonvolatile memory device
UNITED MICROELECTRONICS CORP0 citations52
US10439023B2Oct 8, 2019
Fin-type field effect transistor and method of forming the same
UNITED MICROELECTRONICS CORP0 citations51
US10431652B2Oct 1, 2019
Semiconductor device with single-crystal nanowire FinFET
UNITED MICROELECTRONICS CORP0 citations51
US10177231B2Jan 8, 2019
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations51
US9837493B2Dec 5, 2017
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations51
US9698218B2Jul 4, 2017
Method for forming semiconductor structure
UNITED MICROELECTRONICS CORP0 citations51
US9431482B2Aug 30, 2016
Semiconductor structure
UNITED MICROELECTRONICS CORP0 citations51
US12224338B2Feb 11, 2025
HEMT and fabricating method of the same
UNITED MICROELECTRONICS CORP0 citations44
US6955929B2Oct 18, 2005
Method of measuring a gate channel length of a metal-oxide semiconductor transistor
UNITED MICROELECTRONICS CORP1 citations44
US9590041B1Mar 7, 2017
Semiconductor structure
UNITED MICROELECTRONICS CORP0 citations41