Inventor
HORIOKA KEIJI
JP50 patents
⚠️ This page may combine multiple inventors who share the name “HORIOKA KEIJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
20 patentsUS5627626AMay 6, 1997
Projectin exposure apparatus
TOSHIBA KK102 citations99
US5621498AApr 15, 1997
Projection exposure apparatus
TOSHIBA KK101 citations99
US5302240AApr 12, 1994
Method of manufacturing semiconductor device
TOSHIBA KK200 citations99
US5444207AAug 22, 1995
Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field
TOSHIBA KK132 citations98
US5429730AJul 4, 1995
Method of repairing defect of structure
TOSHIBA KK114 citations97
US5717294AFeb 10, 1998
Plasma process apparatus
TOSHIBA KK65 citations96
US5707501AJan 13, 1998
Filter manufacturing apparatus
TOSHIBA KK81 citations96
US5707487AJan 13, 1998
Method of manufacturing semiconductor device
TOSHIBA KK73 citations96
US5660744AAug 26, 1997
Plasma generating apparatus and surface processing apparatus
TOSHIBA KK65 citations96
US5639699AJun 17, 1997
Focused ion beam deposition using TMCTS
TOSHIBA KK62 citations96
US5445710AAug 29, 1995
Method of manufacturing semiconductor device
TOSHIBA KK86 citations96
US5310454AMay 10, 1994
Dry etching method
TOSHIBA KK54 citations96
US5298112AMar 29, 1994
Method for removing composite attached to material by dry etching
TOSHIBA KK103 citations96
US5258332ANov 2, 1993
Method of manufacturing semiconductor devices including rounding of corner portions by etching
TOSHIBA KK102 citations96
US5240554AAug 31, 1993
Method of manufacturing semiconductor device
TOSHIBA KK59 citations96
US4595601AJun 17, 1986
Method of selectively forming an insulation layer
TOSHIBA KK72 citations96
US5607599AMar 4, 1997
Method of processing a magnetic thin film
TOSHIBA KK55 citations95
US5733713AMar 31, 1998
Method of manufacturing semiconductor device
TOSHIBA KK22 citations93
US5437961AAug 1, 1995
Method of manufacturing semiconductor device
TOSHIBA KK29 citations93
US5543252AAug 6, 1996
Method for manufacturing exposure mask and the exposure mask
TOSHIBA KK15 citations74
TOKYO ELECTRON LTD
15 patentsUS5290381AMar 1, 1994
Plasma etching apparatus
TOKYO ELECTRON LTD116 citations98
US5356515AOct 18, 1994
Dry etching method
TOKYO ELECTRON LTD139 citations97
US5698070ADec 16, 1997
Method of etching film formed on semiconductor wafer
TOKYO ELECTRON LTD56 citations96
US5270266ADec 14, 1993
Method of adjusting the temperature of a semiconductor wafer
TOKYO ELECTRON LTD75 citations96
US5250137AOct 5, 1993
Plasma treating apparatus
TOKYO ELECTRON LTD87 citations96
US5660671AAug 26, 1997
Magnetron plasma processing apparatus and processing method
TOKYO ELECTRON LTD49 citations95
US5259923ANov 9, 1993
Dry etching method
TOKYO ELECTRON LTD61 citations95
US5234527AAug 10, 1993
Liquid level detecting device and a processing apparatus
TOKYO ELECTRON LTD39 citations93
US5320704AJun 14, 1994
Plasma etching apparatus
TOKYO ELECTRON LTD23 citations92
US5302236AApr 12, 1994
Method of etching object to be processed including oxide or nitride portion
TOKYO ELECTRON LTD50 citations92
US5271788ADec 21, 1993
Plasma processing apparatus
TOKYO ELECTRON LTD38 citations92
US5376211ADec 27, 1994
Magnetron plasma processing apparatus and processing method
TOKYO ELECTRON LTD14 citations81
US6261428B1Jul 17, 2001
Magnetron plasma process apparatus
TOKYO ELECTRON LTD10 citations74
US5474643ADec 12, 1995
Plasma processing apparatus
TOKYO ELECTRON LTD10 citations71
US5888338AMar 30, 1999
Magnetron plasma processing apparatus and processing method
TOKYO ELECTRON LTD0 citations51
APPLIED MATERIALS INC
12 patentsUS7807578B2Oct 5, 2010
Frequency doubling using spacer mask
APPLIED MATERIALS INC774 citations98
US7575007B2Aug 18, 2009
Chamber recovery after opening barrier over copper
APPLIED MATERIALS INC197 citations98
US7196283B2Mar 27, 2007
Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
APPLIED MATERIALS INC118 citations97
US6132551AOct 17, 2000
Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
APPLIED MATERIALS INC42 citations93
US6461533B1Oct 8, 2002
Etchant for silicon oxide and method
APPLIED MATERIALS INC20 citations92
US6432318B1Aug 13, 2002
Dielectric etch process reducing striations and maintaining critical dimensions
APPLIED MATERIALS INC24 citations92
US7374636B2May 20, 2008
Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
APPLIED MATERIALS INC21 citations91
US7972469B2Jul 5, 2011
Plasma processing apparatus
APPLIED MATERIALS INC7 citations84
US7879186B2Feb 1, 2011
Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
APPLIED MATERIALS INC7 citations84
US7422654B2Sep 9, 2008
Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
APPLIED MATERIALS INC11 citations84
US7316199B2Jan 8, 2008
Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber
APPLIED MATERIALS INC9 citations83
US7846849B2Dec 7, 2010
Frequency tripling using spacer mask having interposed regions
APPLIED MATERIALS INC1 citations52