Inventor
OKANO HARUO
JP91 patents
⚠️ This page may combine multiple inventors who share the name “OKANO HARUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
42 patentsUS5413967AMay 9, 1995
Method of manufacturing semiconductor devices
TOSHIBA KK292 citations99
US5302240AApr 12, 1994
Method of manufacturing semiconductor device
TOSHIBA KK200 citations99
US5030319AJul 9, 1991
Method of oxide etching with condensed plasma reaction product
TOSHIBA KK390 citations99
US5776557AJul 7, 1998
Method for forming a film on a substrate by activating a reactive gas
TOSHIBA KK110 citations98
US5775980AJul 7, 1998
Polishing method and polishing apparatus
TOSHIBA KK105 citations98
US5731634AMar 24, 1998
Semiconductor device having a metal film formed in a groove in an insulating film
TOSHIBA KK102 citations98
US5607718AMar 4, 1997
Polishing method and polishing apparatus
TOSHIBA KK119 citations98
US5444207AAug 22, 1995
Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field
TOSHIBA KK132 citations98
US5385763AJan 31, 1995
Method for forming a film on a substrate by activating a reactive gas
TOSHIBA KK264 citations98
US5156881AOct 20, 1992
Method for forming a film on a substrate by activating a reactive gas
TOSHIBA KK376 citations98
US5429730AJul 4, 1995
Method of repairing defect of structure
TOSHIBA KK114 citations97
US5429995AJul 4, 1995
Method of manufacturing silicon oxide film containing fluorine
TOSHIBA KK421 citations97
US6306756B1Oct 23, 2001
Method for production of semiconductor device
TOSHIBA KK62 citations96
US6090701AJul 18, 2000
Method for production of semiconductor device
TOSHIBA KK74 citations96
US5948205ASep 7, 1999
Polishing apparatus and method for planarizing layer on a semiconductor wafer
TOSHIBA KK41 citations96
US5914275AJun 22, 1999
Polishing apparatus and method for planarizing layer on a semiconductor wafer
TOSHIBA KK43 citations96
US5707487AJan 13, 1998
Method of manufacturing semiconductor device
TOSHIBA KK73 citations96
US5660744AAug 26, 1997
Plasma generating apparatus and surface processing apparatus
TOSHIBA KK65 citations96
US5654237AAug 5, 1997
Method of manufacturing semiconductor device
TOSHIBA KK59 citations96
US5641702AJun 24, 1997
Method of making semiconductor integrated-circuit capacitor
TOSHIBA KK95 citations96
US5639699AJun 17, 1997
Focused ion beam deposition using TMCTS
TOSHIBA KK62 citations96
US5597341AJan 28, 1997
Semiconductor planarizing apparatus
TOSHIBA KK60 citations96
US5561082AOct 1, 1996
Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide
TOSHIBA KK44 citations96
US5466942ANov 14, 1995
Charged beam irradiating apparatus having a cleaning means and a method of cleaning a charged beam irradiating apparatus
TOSHIBA KK62 citations96
US5445996AAug 29, 1995
Method for planarizing a semiconductor device having a amorphous layer
TOSHIBA KK87 citations96
US5445710AAug 29, 1995
Method of manufacturing semiconductor device
TOSHIBA KK86 citations96
US5440157AAug 8, 1995
Semiconductor integrated-circuit capacitor having a carbon film electrode
TOSHIBA KK46 citations96
US5409862AApr 25, 1995
Method for making aluminum single crystal interconnections on insulators
TOSHIBA KK56 citations96
US5312519AMay 17, 1994
Method of cleaning a charged beam apparatus
TOSHIBA KK104 citations96
US5310454AMay 10, 1994
Dry etching method
TOSHIBA KK54 citations96
US5298112AMar 29, 1994
Method for removing composite attached to material by dry etching
TOSHIBA KK103 citations96
US5258332ANov 2, 1993
Method of manufacturing semiconductor devices including rounding of corner portions by etching
TOSHIBA KK102 citations96
US5240554AAug 31, 1993
Method of manufacturing semiconductor device
TOSHIBA KK59 citations96
US5192714AMar 9, 1993
Method of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively deposited
TOSHIBA KK50 citations96
US4838978AJun 13, 1989
Dry etching apparatus
TOSHIBA KK70 citations96
US4595601AJun 17, 1986
Method of selectively forming an insulation layer
TOSHIBA KK72 citations96
US4529475AJul 16, 1985
Dry etching apparatus and method using reactive gases
TOSHIBA KK68 citations96
US6185472B1Feb 6, 2001
Semiconductor device manufacturing method, manufacturing apparatus, simulation method and simulator
TOSHIBA KK76 citations95
US6093243AJul 25, 2000
Semiconductor device and its fabricating method
TOSHIBA KK50 citations95
US5582640ADec 10, 1996
Semiconductor device and its fabricating method
TOSHIBA KK50 citations95
US5514904AMay 7, 1996
Semiconductor device with monocrystalline gate insulating film
TOSHIBA KK57 citations95
US5733713AMar 31, 1998
Method of manufacturing semiconductor device
TOSHIBA KK22 citations93
TOKYO ELECTRON LTD
5 patentsUS5221403AJun 22, 1993
Support table for plate-like body and processing apparatus using the table
TOKYO ELECTRON LTD60 citations96
US5660671AAug 26, 1997
Magnetron plasma processing apparatus and processing method
TOKYO ELECTRON LTD49 citations95
US5411631AMay 2, 1995
Dry etching method
TOKYO ELECTRON LTD66 citations95
US5259923ANov 9, 1993
Dry etching method
TOKYO ELECTRON LTD61 citations95
US5223113AJun 29, 1993
Apparatus for forming reduced pressure and for processing object
TOKYO ELECTRON LTD74 citations95
TOKYO SHIBAURA ELECTRIC CO
2 patentsAPPLIED MATERIALS INC
1 patentShowing the top 50 of 91 patents by PatentIndex Score.