P

Inventor

OKANO HARUO

JP91 patents
⚠️ This page may combine multiple inventors who share the name “OKANO HARUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

42 patents
US5413967AMay 9, 1995

Method of manufacturing semiconductor devices

TOSHIBA KK292 citations99
US5302240AApr 12, 1994

Method of manufacturing semiconductor device

TOSHIBA KK200 citations99
US5030319AJul 9, 1991

Method of oxide etching with condensed plasma reaction product

TOSHIBA KK390 citations99
US5776557AJul 7, 1998

Method for forming a film on a substrate by activating a reactive gas

TOSHIBA KK110 citations98
US5775980AJul 7, 1998

Polishing method and polishing apparatus

TOSHIBA KK105 citations98
US5731634AMar 24, 1998

Semiconductor device having a metal film formed in a groove in an insulating film

TOSHIBA KK102 citations98
US5607718AMar 4, 1997

Polishing method and polishing apparatus

TOSHIBA KK119 citations98
US5444207AAug 22, 1995

Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field

TOSHIBA KK132 citations98
US5385763AJan 31, 1995

Method for forming a film on a substrate by activating a reactive gas

TOSHIBA KK264 citations98
US5156881AOct 20, 1992

Method for forming a film on a substrate by activating a reactive gas

TOSHIBA KK376 citations98
US5429730AJul 4, 1995

Method of repairing defect of structure

TOSHIBA KK114 citations97
US5429995AJul 4, 1995

Method of manufacturing silicon oxide film containing fluorine

TOSHIBA KK421 citations97
US6306756B1Oct 23, 2001

Method for production of semiconductor device

TOSHIBA KK62 citations96
US6090701AJul 18, 2000

Method for production of semiconductor device

TOSHIBA KK74 citations96
US5948205ASep 7, 1999

Polishing apparatus and method for planarizing layer on a semiconductor wafer

TOSHIBA KK41 citations96
US5914275AJun 22, 1999

Polishing apparatus and method for planarizing layer on a semiconductor wafer

TOSHIBA KK43 citations96
US5707487AJan 13, 1998

Method of manufacturing semiconductor device

TOSHIBA KK73 citations96
US5660744AAug 26, 1997

Plasma generating apparatus and surface processing apparatus

TOSHIBA KK65 citations96
US5654237AAug 5, 1997

Method of manufacturing semiconductor device

TOSHIBA KK59 citations96
US5641702AJun 24, 1997

Method of making semiconductor integrated-circuit capacitor

TOSHIBA KK95 citations96
US5639699AJun 17, 1997

Focused ion beam deposition using TMCTS

TOSHIBA KK62 citations96
US5597341AJan 28, 1997

Semiconductor planarizing apparatus

TOSHIBA KK60 citations96
US5561082AOct 1, 1996

Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide

TOSHIBA KK44 citations96
US5466942ANov 14, 1995

Charged beam irradiating apparatus having a cleaning means and a method of cleaning a charged beam irradiating apparatus

TOSHIBA KK62 citations96
US5445996AAug 29, 1995

Method for planarizing a semiconductor device having a amorphous layer

TOSHIBA KK87 citations96
US5445710AAug 29, 1995

Method of manufacturing semiconductor device

TOSHIBA KK86 citations96
US5440157AAug 8, 1995

Semiconductor integrated-circuit capacitor having a carbon film electrode

TOSHIBA KK46 citations96
US5409862AApr 25, 1995

Method for making aluminum single crystal interconnections on insulators

TOSHIBA KK56 citations96
US5312519AMay 17, 1994

Method of cleaning a charged beam apparatus

TOSHIBA KK104 citations96
US5310454AMay 10, 1994

Dry etching method

TOSHIBA KK54 citations96
US5298112AMar 29, 1994

Method for removing composite attached to material by dry etching

TOSHIBA KK103 citations96
US5258332ANov 2, 1993

Method of manufacturing semiconductor devices including rounding of corner portions by etching

TOSHIBA KK102 citations96
US5240554AAug 31, 1993

Method of manufacturing semiconductor device

TOSHIBA KK59 citations96
US5192714AMar 9, 1993

Method of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively deposited

TOSHIBA KK50 citations96
US4838978AJun 13, 1989

Dry etching apparatus

TOSHIBA KK70 citations96
US4595601AJun 17, 1986

Method of selectively forming an insulation layer

TOSHIBA KK72 citations96
US4529475AJul 16, 1985

Dry etching apparatus and method using reactive gases

TOSHIBA KK68 citations96
US6185472B1Feb 6, 2001

Semiconductor device manufacturing method, manufacturing apparatus, simulation method and simulator

TOSHIBA KK76 citations95
US6093243AJul 25, 2000

Semiconductor device and its fabricating method

TOSHIBA KK50 citations95
US5582640ADec 10, 1996

Semiconductor device and its fabricating method

TOSHIBA KK50 citations95
US5514904AMay 7, 1996

Semiconductor device with monocrystalline gate insulating film

TOSHIBA KK57 citations95
US5733713AMar 31, 1998

Method of manufacturing semiconductor device

TOSHIBA KK22 citations93

TOKYO ELECTRON LTD

5 patents

TOKYO SHIBAURA ELECTRIC CO

2 patents

APPLIED MATERIALS INC

1 patent

Showing the top 50 of 91 patents by PatentIndex Score.