P

Inventor

RIVERO CHRISTIAN

FR70 patents
⚠️ This page may combine multiple inventors who share the name “RIVERO CHRISTIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ST MICROELECTRONICS ROUSSET

39 patents
US9269771B2Feb 23, 2016

Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses

ST MICROELECTRONICS ROUSSET8 citations84
US9263518B2Feb 16, 2016

Component, for example NMOS transistor, with active region with relaxed compression stresses, and fabrication method

ST MICROELECTRONICS ROUSSET7 citations84
US9121896B2Sep 1, 2015

Device for detecting the thinning down of the substrate of an integrated circuit chip

ST MICROELECTRONICS ROUSSET11 citations84
US8884289B2Nov 11, 2014

Integrated mechanical device for electrical switching

ST MICROELECTRONICS ROUSSET8 citations84
US8704327B2Apr 22, 2014

Integrated capacitive device having a thermally variable capacitive value

ST MICROELECTRONICS ROUSSET10 citations84
US8692247B2Apr 8, 2014

Integrated mechanical device for electrical switching

ST MICROELECTRONICS ROUSSET12 citations84
US10763213B2Sep 1, 2020

Integrated circuit having a hidden shared contact

ST MICROELECTRONICS ROUSSET4 citations73
US10242944B2Mar 26, 2019

Integrated circuit comprising an antifuse structure and method of realizing

ST MICROELECTRONICS ROUSSET2 citations73
US10026563B2Jul 17, 2018

Integrated electrical-switching mechanical device having a blocked state

ST MICROELECTRONICS ROUSSET2 citations73
US8941205B2Jan 27, 2015

Method of generating electrical energy in an integrated circuit during the operation of the latter, corresponding integrated circuit and method of fabrication

ST MICROELECTRONICS ROUSSET4 citations73
US10157720B2Dec 18, 2018

Integrated mechanical device with vertical movement

ST MICROELECTRONICS ROUSSET2 citations71
US10229880B2Mar 12, 2019

Stack of layers for protecting against a premature breakdown of interline porous dielectrics within an integrated circuit

ST MICROELECTRONICS ROUSSET4 citations69
US11075246B2Jul 27, 2021

Method for generation of electrical power within a three-dimensional integrated structure and corresponding link device

ST MICROELECTRONICS ROUSSET0 citations63
US9230907B2Jan 5, 2016

Integrated switchable capacitive device

ST MICROELECTRONICS ROUSSET2 citations63
US9127994B2Sep 8, 2015

Method of compensating for effects of mechanical stresses in a microcircuit

ST MICROELECTRONICS ROUSSET2 citations63
US12051656B2Jul 30, 2024

Integrated circuit containing a decoy structure

ST MICROELECTRONICS ROUSSET0 citations62
US11581270B2Feb 14, 2023

Integrated circuit containing a decoy structure

ST MICROELECTRONICS ROUSSET0 citations62
US11270886B2Mar 8, 2022

Transistor comprising a lengthened gate

ST MICROELECTRONICS ROUSSET0 citations62
US10714583B2Jul 14, 2020

MOS transistor with reduced hump effect

ST MICROELECTRONICS ROUSSET1 citations62
US12272509B2Apr 8, 2025

Electrically controllable integrated switch

ST MICROELECTRONICS ROUSSET0 citations61
US12057513B2Aug 6, 2024

Integrated circuit including a capacitive element and corresponding manufacturing method

ST MICROELECTRONICS ROUSSET0 citations59
US11721773B2Aug 8, 2023

Integrated circuit including a capacitive element and corresponding manufacturing method

ST MICROELECTRONICS ROUSSET0 citations59
US10878918B2Dec 29, 2020

Method for detecting a thinning of the semiconductor substrate of an integrated circuit from its back face and corresponding integrated circuit

ST MICROELECTRONICS ROUSSET0 citations52
US10861802B2Dec 8, 2020

Method for forming at least one electrical discontinuity in an integrated circuit, and corresponding integrated circuit

ST MICROELECTRONICS ROUSSET0 citations52
US10804222B2Oct 13, 2020

Integrated circuit containing a decoy structure formed by an electrically insulated silicide sector

ST MICROELECTRONICS ROUSSET0 citations52
US10797158B2Oct 6, 2020

Transistor comprising a lengthened gate

ST MICROELECTRONICS ROUSSET0 citations52
US10770547B2Sep 8, 2020

Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses

ST MICROELECTRONICS ROUSSET0 citations52
US10685912B2Jun 16, 2020

Integrated circuit comprising an antifuse structure and method of realizing

ST MICROELECTRONICS ROUSSET0 citations52
US10580498B2Mar 3, 2020

Method for detecting a thinning of the semiconductor substrate of an integrated circuit from its back face and corresponding integrated circuit

ST MICROELECTRONICS ROUSSET0 citations52
US10490632B2Nov 26, 2019

Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses

ST MICROELECTRONICS ROUSSET0 citations52
US10475713B2Nov 12, 2019

Controllable integrated capacitive device

ST MICROELECTRONICS ROUSSET0 citations52
US10388695B2Aug 20, 2019

Method of wireless communication between two devices, especially within one and the same integrated circuit, and corresponding system

ST MICROELECTRONICS ROUSSET0 citations52
US10249679B2Apr 2, 2019

Method of wireless communication using thermoelectric generators

ST MICROELECTRONICS ROUSSET0 citations52
US10211291B2Feb 19, 2019

Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses

ST MICROELECTRONICS ROUSSET0 citations52
US10177101B2Jan 8, 2019

Method for forming at least one electrical discontinuity in an integrated circuit, and corresponding integrated circuit

ST MICROELECTRONICS ROUSSET0 citations52
US10049991B2Aug 14, 2018

Method for forming at least one electrical discontinuity in an interconnection part of an integrated circuit, and corresponding integrated circuit

ST MICROELECTRONICS ROUSSET0 citations52
US9978847B2May 22, 2018

Method for producing a high-voltage transistor with reduced footprint, and corresponding integrated circuit

ST MICROELECTRONICS ROUSSET1 citations52
US9916902B2Mar 13, 2018

Method for detecting a thinning of the semiconductor substrate of an integrated circuit from its back face and corresponding integrated circuit

ST MICROELECTRONICS ROUSSET0 citations52
US9899476B2Feb 20, 2018

Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses

ST MICROELECTRONICS ROUSSET0 citations52

STMICROELECTRONICS ROUSSET

6 patents

FORNARA PASCAL

4 patents

RIVERO CHRISTIAN

1 patent

Showing the top 50 of 70 patents by PatentIndex Score.