P

Inventor

HU YONGJUN

US34 patents
⚠️ This page may combine multiple inventors who share the name “HU YONGJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

31 patents
US5633200AMay 27, 1997

Process for manufacturing a large grain tungsten nitride film and process for manufacturing a lightly nitrided titanium salicide diffusion barrier with a large grain tungsten nitride cover layer

MICRON TECHNOLOGY INC164 citations99
US6436818B1Aug 20, 2002

Semiconductor structure having a doped conductive layer

MICRON TECHNOLOGY INC114 citations98
US6015997AJan 18, 2000

Semiconductor structure having a doped conductive layer

MICRON TECHNOLOGY INC87 citations98
US6614085B2Sep 2, 2003

Antireflective coating layer

MICRON TECHNOLOGY INC47 citations96
US6096640AAug 1, 2000

Method of making a gate electrode stack with a diffusion barrier

MICRON TECHNOLOGY INC51 citations96
US5962904AOct 5, 1999

Gate electrode stack with diffusion barrier

MICRON TECHNOLOGY INC53 citations96
US5725739AMar 10, 1998

Low angle, low energy physical vapor deposition of alloys

MICRON TECHNOLOGY INC82 citations96
US6262458B1Jul 17, 2001

Low resistivity titanium silicide structures

MICRON TECHNOLOGY INC22 citations92
US5926730AJul 20, 1999

Conductor layer nitridation

MICRON TECHNOLOGY INC30 citations92
US5863393AJan 26, 1999

Low angle, low energy physical vapor deposition of alloys

MICRON TECHNOLOGY INC21 citations92
US6680246B2Jan 20, 2004

Process for forming a nitride film

MICRON TECHNOLOGY INC11 citations82
US6204171B1Mar 20, 2001

Process for forming a film composed of a nitride of a diffusion barrier material

MICRON TECHNOLOGY INC12 citations82
US6887774B2May 3, 2005

Conductor layer nitridation

MICRON TECHNOLOGY INC8 citations74
US6806573B2Oct 19, 2004

Low angle, low energy physical vapor deposition of alloys

MICRON TECHNOLOGY INC6 citations74
US6798026B2Sep 28, 2004

Conductor layer nitridation

MICRON TECHNOLOGY INC10 citations74
US6753584B1Jun 22, 2004

Antireflective coating layer

MICRON TECHNOLOGY INC11 citations74
US6525384B2Feb 25, 2003

Conductor layer nitridation

MICRON TECHNOLOGY INC7 citations74
US6445045B2Sep 3, 2002

Low resistivity titanium silicide structures

MICRON TECHNOLOGY INC5 citations74
US6417104B1Jul 9, 2002

Method for making a low resistivity electrode having a near noble metal

MICRON TECHNOLOGY INC5 citations74
US6214711B1Apr 10, 2001

Method of low angle, low energy physical vapor of alloys including redepositing layers of different compositions in trenches

MICRON TECHNOLOGY INC11 citations74
US6004869ADec 21, 1999

Method for making a low resistivity electrode having a near noble metal

MICRON TECHNOLOGY INC7 citations74
US6689685B2Feb 10, 2004

Process for forming a diffusion barrier material nitride film

MICRON TECHNOLOGY INC2 citations63
US6627389B1Sep 30, 2003

Photolithography method using an antireflective coating

MICRON TECHNOLOGY INC2 citations63
US6444579B1Sep 3, 2002

Methods of forming low resistivity titanium silicide structures

MICRON TECHNOLOGY INC3 citations63
US6127270AOct 3, 2000

Methods of forming refractory metal silicide components and methods of restricting silicon surface migration of a silicon structure

MICRON TECHNOLOGY INC2 citations63
US7105997B1Sep 12, 2006

Field emitter devices with emitters having implanted layer

MICRON TECHNOLOGY INC0 citations52
US6998341B2Feb 14, 2006

Process for forming a diffusion barrier material nitride film

MICRON TECHNOLOGY INC0 citations52
US6953749B2Oct 11, 2005

Methods of forming refractory metal silicide components and methods of restricting silicon surface migration of a silicon structure

MICRON TECHNOLOGY INC0 citations52
US6479381B2Nov 12, 2002

Process for forming a diffusion-barrier-material nitride film

MICRON TECHNOLOGY INC0 citations52
US6468905B1Oct 22, 2002

Methods of restricting silicon migration

MICRON TECHNOLOGY INC0 citations52
US6120915ASep 19, 2000

Methods of forming refractory metal silicide components and methods of restricting silicon surface migration of a silicon structure

MICRON TECHNOLOGY INC0 citations52

SHENZHEN ELEGOO TECH CO LTD

1 patent

INTEL CORP

1 patent

HU YONGJUN

1 patent