P

Inventor

STOCKMEIER MATTHIAS

DE8 patents
⚠️ This page may combine multiple inventors who share the name “STOCKMEIER MATTHIAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SICRYSTAL GMBH

6 patents
US11236438B2Feb 1, 2022

Silicon carbide substrate and method of growing SiC single crystal boules

SICRYSTAL GMBH4 citations70
US12460314B2Nov 4, 2025

Silicon carbide substrate and method of growing SiC single crystal boules

SICRYSTAL GMBH0 citations59
US11781245B2Oct 10, 2023

Silicon carbide substrate and method of growing SiC single crystal boules

SICRYSTAL GMBH0 citations59
US11624124B2Apr 11, 2023

Silicon carbide substrate and method of growing SiC single crystal boules

SICRYSTAL GMBH1 citations59
US11041254B2Jun 22, 2021

Chamfered silicon carbide substrate and method of chamfering

SICRYSTAL GMBH1 citations59
US11515140B2Nov 29, 2022

Chamfered silicon carbide substrate and method of chamfering

SICRYSTAL GMBH0 citations49

SICRYSTAL AG

1 patent
US9732438B2Aug 15, 2017

Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate

SICRYSTAL AG2 citations70

SI CRYSTAL GMBH

1 patent
US11261536B2Mar 1, 2022

Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element density

SI CRYSTAL GMBH0 citations42