Inventor

SPEECE WILLIAM H

US9 patents

⚠️ This page may combine multiple inventors who share the name “SPEECE WILLIAM H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HARRIS CORP

5 patents

US5517047AMay 14, 1996

Bonded wafer processing

HARRIS CORP53 citations96

US5362667ANov 8, 1994

Bonded wafer processing

HARRIS CORP93 citations96

US5293052AMar 8, 1994

SOT CMOS device having differentially doped body extension for providing improved backside leakage channel stop

HARRIS CORP23 citations91

US5391903AFeb 21, 1995

Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits

HARRIS CORP21 citations87

US5298434AMar 29, 1994

Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits

HARRIS CORP18 citations77

INTERSIL INC

2 patents

US7052973B2May 30, 2006

Bonded substrate for an integrated circuit containing a planar intrinsic gettering zone

INTERSIL INC5 citations72

US6825532B2Nov 30, 2004

Bonded substrate for an integrated circuit containing a planar intrinsic gettering zone

INTERSIL INC12 citations72

INTERSIL CORP

1 patent

US6255195B1Jul 3, 2001

Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method

INTERSIL CORP66 citations95

CHERNE RICHARD D

1 patent

USH1435HMay 2, 1995

SOI CMOS device having body extension for providing sidewall channel stop and bodytie

CHERNE RICHARD D72 citations89