Inventor
WONG SHAN
US2 patents
Patents
2 patentsUS7335609B2Feb 26, 2008
Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
APPLIED MATERIALS INC70 citations95
US7456116B2Nov 25, 2008
Gap-fill depositions in the formation of silicon containing dielectric materials
APPLIED MATERIALS INC42 citations90