Inventor
XIA XINYUN
US4 patents
Patents
4 patentsUS7335609B2Feb 26, 2008
Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
APPLIED MATERIALS INC70 citations95
US6905939B2Jun 14, 2005
Process for forming silicon oxide material
APPLIED MATERIALS INC28 citations91
US7456116B2Nov 25, 2008
Gap-fill depositions in the formation of silicon containing dielectric materials
APPLIED MATERIALS INC42 citations90
US7642171B2Jan 5, 2010
Multi-step anneal of thin films for film densification and improved gap-fill
APPLIED MATERIALS INC15 citations83