Inventor
Huang sheng-yao
TW15 patents
⚠️ This page may combine multiple inventors who share the name “Huang sheng-yao”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
13 patentsUS11631771B2Apr 18, 2023
Oxide semiconductor field effect transistor
UNITED MICROELECTRONICS CORP1 citations71
US11088285B2Aug 10, 2021
Oxide semiconductor field effect transistor and forming method thereof
UNITED MICROELECTRONICS CORP3 citations71
US10446689B1Oct 15, 2019
Manufacturing method of oxide semiconductor device
UNITED MICROELECTRONICS CORP4 citations71
US12328898B2Jun 10, 2025
High voltage semiconductor device including buried oxide layer
UNITED MICROELECTRONICS CORP0 citations61
US12040396B2Jul 16, 2024
High voltage semiconductor device including buried oxide layer
UNITED MICROELECTRONICS CORP0 citations61
US11869953B2Jan 9, 2024
High voltage transistor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations61
US11721702B2Aug 8, 2023
Fabrication method of fin transistor
UNITED MICROELECTRONICS CORP0 citations61
US11626515B2Apr 11, 2023
High voltage semiconductor device including buried oxide layer and method for forming the same
UNITED MICROELECTRONICS CORP0 citations61
US11476343B2Oct 18, 2022
High voltage transistor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations61
US11417685B2Aug 16, 2022
Fin transistor structure and fabrication method thereof
UNITED MICROELECTRONICS CORP1 citations61
US12027629B2Jul 2, 2024
Oxide semiconductor field effect transistor
UNITED MICROELECTRONICS CORP0 citations60
US11342465B2May 24, 2022
Method of forming oxide semiconductor field effect transistor
UNITED MICROELECTRONICS CORP0 citations60
US10446688B1Oct 15, 2019
Oxide semiconductor device and manufacturing method thereof
UNITED MICROELECTRONICS CORP0 citations50