Inventor
CHO BAEK-HYUNG
KR4 patents
Patents
4 patentsUS7248494B2Jul 24, 2007
Semiconductor memory device capable of compensating for leakage current
SAMSUNG ELECTRONICS CO LTD158 citations98
US6885602B2Apr 26, 2005
Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit therefor
SAMSUNG ELECTRONICS CO LTD64 citations95
US7447092B2Nov 4, 2008
Write driver circuit for controlling a write current applied to a phase change memory based on an ambient temperature
SAMSUNG ELECTRONICS CO LTD15 citations92
US5999390ADec 7, 1999
Input buffer circuit for semiconductor device
SAMSUNG ELECTRONICS CO LTD9 citations70