P

Inventor

HA DAE WON

KR57 patents
⚠️ This page may combine multiple inventors who share the name “HA DAE WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

47 patents
US7843718B2Nov 30, 2010

Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD238 citations99
US6335233B1Jan 1, 2002

Method for fabricating MOS transistor

SAMSUNG ELECTRONICS CO LTD130 citations97
US6451708B1Sep 17, 2002

Method of forming contact holes in a semiconductor device

SAMSUNG ELECTRONICS CO LTD62 citations96
US8036018B2Oct 11, 2011

Non-volatile memory devices including stacked NAND-type resistive memory cell strings

SAMSUNG ELECTRONICS CO LTD16 citations93
US11139271B2Oct 5, 2021

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations84
US10153212B2Dec 11, 2018

Semiconductor device including contact structure

SAMSUNG ELECTRONICS CO LTD12 citations84
US10177148B2Jan 8, 2019

Integrated circuit devices and methods of fabricating such devices

SAMSUNG ELECTRONICS CO LTD8 citations82
US6319785B1Nov 20, 2001

Method for forming a contact in a semiconductor device

SAMSUNG ELECTRONICS CO LTD14 citations74
US6117715ASep 12, 2000

Methods of fabricating integrated circuit field effect transistors by performing multiple implants prior to forming the gate insulating layer thereof

SAMSUNG ELECTRONICS CO LTD10 citations74
US12132044B2Oct 29, 2024

Semiconductor device including an upper contact in contact with a side surface of an upper gate structure

SAMSUNG ELECTRONICS CO LTD2 citations73
US11094593B2Aug 17, 2021

Semiconductor device including contact structure

SAMSUNG ELECTRONICS CO LTD2 citations73
US7843741B2Nov 30, 2010

Memory devices with selective pre-write verification and methods of operation thereof

SAMSUNG ELECTRONICS CO LTD6 citations73
US7804703B2Sep 28, 2010

Phase change memory device having Schottky diode and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations73
US11387345B2Jul 12, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations72
US10937887B2Mar 2, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations72
US10978453B2Apr 13, 2021

Integrated circuit devices and methods of fabricating such devices

SAMSUNG ELECTRONICS CO LTD2 citations71
US10964782B2Mar 30, 2021

Semiconductor device including isolation regions

SAMSUNG ELECTRONICS CO LTD1 citations71
US10916534B2Feb 9, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations71
US10629742B2Apr 21, 2020

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations71
US10529801B2Jan 7, 2020

Semiconductor device including isolation regions

SAMSUNG ELECTRONICS CO LTD3 citations71
US12009346B2Jun 11, 2024

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations63
US11728430B2Aug 15, 2023

Semiconductor devices including a stress pattern

SAMSUNG ELECTRONICS CO LTD0 citations63
US11705435B2Jul 18, 2023

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations63
US11195952B2Dec 7, 2021

Semiconductor devices including a stress pattern

SAMSUNG ELECTRONICS CO LTD1 citations63
US7923810B2Apr 12, 2011

Semiconductor devices having active elements with raised semiconductor patterns and related methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7871890B2Jan 18, 2011

Methods of fabricating semiconductor devices having resistors

SAMSUNG ELECTRONICS CO LTD2 citations63
US12261204B2Mar 25, 2025

Semiconductor devices and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12107139B2Oct 1, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11973111B2Apr 30, 2024

Semiconductor devices and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11799013B2Oct 24, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11798850B2Oct 24, 2023

Semiconductor device including contact structure

SAMSUNG ELECTRONICS CO LTD0 citations62
US8050083B2Nov 1, 2011

Phase change memory device and write method thereof

SAMSUNG ELECTRONICS CO LTD4 citations62
US12261200B2Mar 25, 2025

Semiconductor device including isolation regions

SAMSUNG ELECTRONICS CO LTD0 citations61
US11894376B2Feb 6, 2024

Integrated circuit devices and methods of fabricating such devices

SAMSUNG ELECTRONICS CO LTD0 citations61
US11830911B2Nov 28, 2023

Semiconductor device including isolation regions

SAMSUNG ELECTRONICS CO LTD0 citations61
US11575002B2Feb 7, 2023

Semiconductor device including isolation regions

SAMSUNG ELECTRONICS CO LTD0 citations61
US11211497B2Dec 28, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations59
US12538556B2Jan 27, 2026

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations58
US12133393B2Oct 29, 2024

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations57
US12507483B2Dec 23, 2025

Semiconductor device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US12396237B2Aug 19, 2025

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US12389584B2Aug 12, 2025

Semiconductor memory devices and methods for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7557403B2Jul 7, 2009

Double gate transistors having at least two polysilicon patterns on a thin body used as active region and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US12266656B2Apr 1, 2025

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US12243754B2Mar 4, 2025

Semiconductor device and a method of manufacturing the semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US10916545B2Feb 9, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US9711505B2Jul 18, 2017

Semiconductor devices having dummy gate structure for controlling channel stress

SAMSUNG ELECTRONICS CO LTD0 citations51

KOH GWAN-HYEOB

2 patents

KIM DOO-GON

1 patent

Showing the top 50 of 57 patents by PatentIndex Score.