Inventor
HA DAE WON
KR57 patents
⚠️ This page may combine multiple inventors who share the name “HA DAE WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
47 patentsUS7843718B2Nov 30, 2010
Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD238 citations99
US6335233B1Jan 1, 2002
Method for fabricating MOS transistor
SAMSUNG ELECTRONICS CO LTD130 citations97
US6451708B1Sep 17, 2002
Method of forming contact holes in a semiconductor device
SAMSUNG ELECTRONICS CO LTD62 citations96
US8036018B2Oct 11, 2011
Non-volatile memory devices including stacked NAND-type resistive memory cell strings
SAMSUNG ELECTRONICS CO LTD16 citations93
US11139271B2Oct 5, 2021
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations84
US10153212B2Dec 11, 2018
Semiconductor device including contact structure
SAMSUNG ELECTRONICS CO LTD12 citations84
US10177148B2Jan 8, 2019
Integrated circuit devices and methods of fabricating such devices
SAMSUNG ELECTRONICS CO LTD8 citations82
US6319785B1Nov 20, 2001
Method for forming a contact in a semiconductor device
SAMSUNG ELECTRONICS CO LTD14 citations74
US6117715ASep 12, 2000
Methods of fabricating integrated circuit field effect transistors by performing multiple implants prior to forming the gate insulating layer thereof
SAMSUNG ELECTRONICS CO LTD10 citations74
US12132044B2Oct 29, 2024
Semiconductor device including an upper contact in contact with a side surface of an upper gate structure
SAMSUNG ELECTRONICS CO LTD2 citations73
US11094593B2Aug 17, 2021
Semiconductor device including contact structure
SAMSUNG ELECTRONICS CO LTD2 citations73
US7843741B2Nov 30, 2010
Memory devices with selective pre-write verification and methods of operation thereof
SAMSUNG ELECTRONICS CO LTD6 citations73
US7804703B2Sep 28, 2010
Phase change memory device having Schottky diode and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US11387345B2Jul 12, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US10937887B2Mar 2, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations72
US10978453B2Apr 13, 2021
Integrated circuit devices and methods of fabricating such devices
SAMSUNG ELECTRONICS CO LTD2 citations71
US10964782B2Mar 30, 2021
Semiconductor device including isolation regions
SAMSUNG ELECTRONICS CO LTD1 citations71
US10916534B2Feb 9, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US10629742B2Apr 21, 2020
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations71
US10529801B2Jan 7, 2020
Semiconductor device including isolation regions
SAMSUNG ELECTRONICS CO LTD3 citations71
US12009346B2Jun 11, 2024
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations63
US11728430B2Aug 15, 2023
Semiconductor devices including a stress pattern
SAMSUNG ELECTRONICS CO LTD0 citations63
US11705435B2Jul 18, 2023
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations63
US11195952B2Dec 7, 2021
Semiconductor devices including a stress pattern
SAMSUNG ELECTRONICS CO LTD1 citations63
US7923810B2Apr 12, 2011
Semiconductor devices having active elements with raised semiconductor patterns and related methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7871890B2Jan 18, 2011
Methods of fabricating semiconductor devices having resistors
SAMSUNG ELECTRONICS CO LTD2 citations63
US12261204B2Mar 25, 2025
Semiconductor devices and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12107139B2Oct 1, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11973111B2Apr 30, 2024
Semiconductor devices and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11799013B2Oct 24, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11798850B2Oct 24, 2023
Semiconductor device including contact structure
SAMSUNG ELECTRONICS CO LTD0 citations62
US8050083B2Nov 1, 2011
Phase change memory device and write method thereof
SAMSUNG ELECTRONICS CO LTD4 citations62
US12261200B2Mar 25, 2025
Semiconductor device including isolation regions
SAMSUNG ELECTRONICS CO LTD0 citations61
US11894376B2Feb 6, 2024
Integrated circuit devices and methods of fabricating such devices
SAMSUNG ELECTRONICS CO LTD0 citations61
US11830911B2Nov 28, 2023
Semiconductor device including isolation regions
SAMSUNG ELECTRONICS CO LTD0 citations61
US11575002B2Feb 7, 2023
Semiconductor device including isolation regions
SAMSUNG ELECTRONICS CO LTD0 citations61
US11211497B2Dec 28, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations59
US12538556B2Jan 27, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations58
US12133393B2Oct 29, 2024
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations57
US12507483B2Dec 23, 2025
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12396237B2Aug 19, 2025
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12389584B2Aug 12, 2025
Semiconductor memory devices and methods for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7557403B2Jul 7, 2009
Double gate transistors having at least two polysilicon patterns on a thin body used as active region and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12266656B2Apr 1, 2025
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12243754B2Mar 4, 2025
Semiconductor device and a method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10916545B2Feb 9, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US9711505B2Jul 18, 2017
Semiconductor devices having dummy gate structure for controlling channel stress
SAMSUNG ELECTRONICS CO LTD0 citations51
KOH GWAN-HYEOB
2 patentsKIM DOO-GON
1 patentShowing the top 50 of 57 patents by PatentIndex Score.