Inventor

RIVA CARLO

IT62 patents

⚠️ This page may combine multiple inventors who share the name “RIVA CARLO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RIVA CARLO

SGS THOMSON MICROELECTRONICS

High-voltage-resistant MOS transistor, and corresponding manufacturing process

Nonvolatile memory cell and a method for forming the same

Method for realizing magnetic circuits in an integrated circuit

Method of making asymmetric nonvolatile memory cell

Process for forming an integrated circuit comprising non-volatile memory cells and side transistors of at least two different types, and corresponding IC

Process for forming an integrated circuit comprising non-volatile memory cells and side transistors and corresponding IC

Process for forming an integrated circuit comprising non-volatile memory cells and side transistors and corresponding IC

Circuit structure for a memory matrix and corresponding manufacturing method

Method of producing MOSFET transistors by means of tilted implants

Electrically erasable and programmable read-only memory cells with a single polysilicon level and method for producing the same

Method of making thin oxide portions consisting of gate and tunnel oxides particularly in electrically erasable and programmable read-only memory cells

Method of making thin oxide portions particularly in electrically erasable and programmable read-only memory cells

Process for obtaining high-voltage N channel transistors particularly for EEPROM memories with CMOS technology

Reference cell for reading eeprom memory devices

Method of manufacturing a matrix of memory cells having control gates

Process for the manufacture of a component to limit the programming voltage and to stabilize the voltage incorporated in an electric device with EEPROM memory cells

CMOS logic circuit for high voltage operation

Process for manufacturing eeprom memory cells having a single level of polysilicon and thin oxide by using differential oxidation

Eeprom memory cell with improved protection against errors due to cell breakdown

RECORDATI CHEM PHARM

Bicyclic heterocyclic derivatives having α1 adrenergic and 5HT1A activities

N,N-disubstituted diazocycloalkanes

Isoxazolecarboxamide derivatives

Thienopyrancecarboxamide derivatives

1-(N-phenylaminoalkyl)piperazine derivatives substituted at position 2 of the phenyl ring

Bicyclic heterocyclic derivatives having α1 -adrenergic and 5HT1A

Benzopyran and benzothiopyran derivatives

1-(N-phenylaminoalkyl)piperazine derivatives substituted at position 2 of the phenyl ring

Benzopyran derivatives

Thienopyranecarboxamide derivatives

Thienopyranecarboxamide derivatives

1,4-disubstituted piperazines

Isoxazolecarboxamide derivatives

Flavone derivatives

ST MICROELECTRONICS SRL

Method of manufacturing double polysilicon EEPROM cell and access transistor

Double polysilicon EEPROM cell and corresponding manufacturing process and programming method

Process for obtaining an N-channel single polysilicon level EPROM cell and cell obtained with said process

Single polysilicon level flash EEPROM cell and manufacturing process therefor

N-channel single polysilicon level EPROM cell

Flash EEPROM with integrated device for limiting the erase source voltage

Manufacturing process for making single polysilicon level flash EEPROM cell

EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit

Process for forming an edge structure to seal integrated electronic devices, and corresponding device

SGS MICROELETTRONICA SPA

Process for making structures including E2PROM nonvolatile memory cells with self-aligned layers of silicon and associated transistors

EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit

Eeprom memory cell with a single polysilicon level and a tunnel oxide zone

RIVA CARLO

Device for the rapid fastening and unfastening of tubular filtering fabrics

BEEHRINGER BIOCHEMIA ROBIN S P

2-methylthiomethyl-dihydropyridines and pharmaceutical compositions containing them

STMICROELCTRONICS S R L

HV transistor structure and corresponding manufacturing method

ZAMBON SPA

Macrolide compounds endowed with antiinflammatory activity

RECORDATI IND CHIMICA E FARMACEUTICA S P A

Substituted [1,2,4]triazolo[4,3-a]pyrazines as modulators of mGlu5 receptors