P

Inventor

CHANG JONATHAN TSUNG-YUNG

TW115 patents
⚠️ This page may combine multiple inventors who share the name “CHANG JONATHAN TSUNG-YUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

42 patents
US9183341B2Nov 10, 2015

Pre-colored methodology of multiple patterning

TAIWAN SEMICONDUCTOR MFG CO LTD24 citations93
US9824729B2Nov 21, 2017

Memory macro and method of operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations92
US9437281B2Sep 6, 2016

Negative bitline boost scheme for SRAM write-assist

TAIWAN SEMICONDUCTOR MFG CO LTD20 citations92
US9070432B2Jun 30, 2015

Negative bitline boost scheme for SRAM write-assist

TAIWAN SEMICONDUCTOR MFG CO LTD27 citations92
US11423974B2Aug 23, 2022

Method of forming semiconductor device including distributed write driving arrangement

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10991420B2Apr 27, 2021

Semiconductor device including distributed write driving arrangement and method of operating same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10839894B2Nov 17, 2020

Memory computation circuit and method

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10803928B2Oct 13, 2020

Low voltage memory device

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10755768B2Aug 25, 2020

Semiconductor device including distributed write driving arrangement and method of operating same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10559333B2Feb 11, 2020

Memory macro and method of operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10541007B2Jan 21, 2020

Memory device with strap cells

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10503421B2Dec 10, 2019

Configurable memory storage system

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10319421B2Jun 11, 2019

Memory macro and method of operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10204660B2Feb 12, 2019

Memory device with strap cells

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9997219B2Jun 12, 2018

Memory macro and method of operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9922700B2Mar 20, 2018

Memory read stability enhancement with short segmented bit line architecture

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9842627B2Dec 12, 2017

Memory device with strap cells

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9680012B1Jun 13, 2017

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9601162B1Mar 21, 2017

Memory devices with strap cells

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9075936B2Jul 7, 2015

Pre-colored methodology of multiple patterning

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9305635B2Apr 5, 2016

High density memory structure

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US9281031B2Mar 8, 2016

Method and apparatus for read assist to compensate for weak bit

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11901035B2Feb 13, 2024

Method of differentiated thermal throttling of memory and system therefor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11854943B2Dec 26, 2023

Memory macro including through-silicon via

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11783890B2Oct 10, 2023

Semiconductor device including distributed write driving arrangement

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11651804B2May 16, 2023

Memory macro and method of operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11646079B2May 9, 2023

Memory cell including programmable resistors with transistor components

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11562946B2Jan 24, 2023

Memory macro including through-silicon via

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11404114B2Aug 2, 2022

Low voltage memory device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11301148B2Apr 12, 2022

Configurable memory storage system

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11031055B2Jun 8, 2021

Memory macro and method of operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10949100B2Mar 16, 2021

Configurable memory storage system

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10847214B2Nov 24, 2020

Low voltage bit-cell

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10672776B2Jun 2, 2020

Memory circuit having resistive device coupled with supply voltage line

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10510403B2Dec 17, 2019

Memory read stability enhancement with short segmented bit line architecture

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10504604B2Dec 10, 2019

Systems and methods to test a memory device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10373964B2Aug 6, 2019

Method of writing to memory circuit using resistive device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10304500B2May 28, 2019

Power switch control for dual power supply

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10153038B2Dec 11, 2018

Memory read stability enhancement with short segmented bit line architecture

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9865605B2Jan 9, 2018

Memory circuit having resistive device coupled with supply voltage line

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9741429B1Aug 22, 2017

Memory with write assist circuit

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9685224B2Jun 20, 2017

Memory with bit line control

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

CHANG JONATHAN TSUNG-YUNG

3 patents

TAIWAN SEMICONDUCTOR MFG

2 patents

CHENG CHITING

1 patent

CHEN YEN-HUEI

1 patent

LIN CHIH-YU

1 patent

Showing the top 50 of 115 patents by PatentIndex Score.