Inventor
CHANG JONATHAN TSUNG-YUNG
TW115 patents
⚠️ This page may combine multiple inventors who share the name “CHANG JONATHAN TSUNG-YUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
42 patentsUS9183341B2Nov 10, 2015
Pre-colored methodology of multiple patterning
TAIWAN SEMICONDUCTOR MFG CO LTD24 citations93
US9824729B2Nov 21, 2017
Memory macro and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations92
US9437281B2Sep 6, 2016
Negative bitline boost scheme for SRAM write-assist
TAIWAN SEMICONDUCTOR MFG CO LTD20 citations92
US9070432B2Jun 30, 2015
Negative bitline boost scheme for SRAM write-assist
TAIWAN SEMICONDUCTOR MFG CO LTD27 citations92
US11423974B2Aug 23, 2022
Method of forming semiconductor device including distributed write driving arrangement
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10991420B2Apr 27, 2021
Semiconductor device including distributed write driving arrangement and method of operating same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10839894B2Nov 17, 2020
Memory computation circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10803928B2Oct 13, 2020
Low voltage memory device
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10755768B2Aug 25, 2020
Semiconductor device including distributed write driving arrangement and method of operating same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10559333B2Feb 11, 2020
Memory macro and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10541007B2Jan 21, 2020
Memory device with strap cells
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10503421B2Dec 10, 2019
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10319421B2Jun 11, 2019
Memory macro and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10204660B2Feb 12, 2019
Memory device with strap cells
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9997219B2Jun 12, 2018
Memory macro and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9922700B2Mar 20, 2018
Memory read stability enhancement with short segmented bit line architecture
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9842627B2Dec 12, 2017
Memory device with strap cells
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9680012B1Jun 13, 2017
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9601162B1Mar 21, 2017
Memory devices with strap cells
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9075936B2Jul 7, 2015
Pre-colored methodology of multiple patterning
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9305635B2Apr 5, 2016
High density memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US9281031B2Mar 8, 2016
Method and apparatus for read assist to compensate for weak bit
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11901035B2Feb 13, 2024
Method of differentiated thermal throttling of memory and system therefor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11854943B2Dec 26, 2023
Memory macro including through-silicon via
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11783890B2Oct 10, 2023
Semiconductor device including distributed write driving arrangement
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11651804B2May 16, 2023
Memory macro and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11646079B2May 9, 2023
Memory cell including programmable resistors with transistor components
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11562946B2Jan 24, 2023
Memory macro including through-silicon via
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11404114B2Aug 2, 2022
Low voltage memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11301148B2Apr 12, 2022
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11031055B2Jun 8, 2021
Memory macro and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10949100B2Mar 16, 2021
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10847214B2Nov 24, 2020
Low voltage bit-cell
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10672776B2Jun 2, 2020
Memory circuit having resistive device coupled with supply voltage line
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10510403B2Dec 17, 2019
Memory read stability enhancement with short segmented bit line architecture
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10504604B2Dec 10, 2019
Systems and methods to test a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10373964B2Aug 6, 2019
Method of writing to memory circuit using resistive device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10304500B2May 28, 2019
Power switch control for dual power supply
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10153038B2Dec 11, 2018
Memory read stability enhancement with short segmented bit line architecture
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9865605B2Jan 9, 2018
Memory circuit having resistive device coupled with supply voltage line
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9741429B1Aug 22, 2017
Memory with write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9685224B2Jun 20, 2017
Memory with bit line control
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
CHANG JONATHAN TSUNG-YUNG
3 patentsUS9064550B2Jun 23, 2015
Method and apparatus for word line suppression
CHANG JONATHAN TSUNG-YUNG13 citations83
US8848461B2Sep 30, 2014
Memory cell having flexible read/write assist and method of using
CHANG JONATHAN TSUNG-YUNG11 citations83
US8958232B2Feb 17, 2015
Method and apparatus for read assist to compensate for weak bit
CHANG JONATHAN TSUNG-YUNG13 citations82
TAIWAN SEMICONDUCTOR MFG
2 patentsCHENG CHITING
1 patentCHEN YEN-HUEI
1 patentLIN CHIH-YU
1 patentShowing the top 50 of 115 patents by PatentIndex Score.