Inventor
KING YA-CHIN
TW61 patents
⚠️ This page may combine multiple inventors who share the name “KING YA-CHIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
19 patentsUS11646079B2May 9, 2023
Memory cell including programmable resistors with transistor components
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12051466B2Jul 30, 2024
Memory cell including programmable resistors with transistor components
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11824133B2Nov 21, 2023
Detection using semiconductor detector
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11043601B2Jun 22, 2021
Non-volatile memory cell and non-volatile memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US9831130B2Nov 28, 2017
Method for forming semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12009177B2Jun 11, 2024
Detection using semiconductor detector
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12424279B2Sep 23, 2025
Memory cell including programmable resistors with transistor components
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11695082B2Jul 4, 2023
Non-volatile memory cell and non-volatile memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11653503B2May 16, 2023
Semiconductor structure with data storage structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12399432B2Aug 26, 2025
Semiconductor fabrication apparatus and method of using the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12347504B2Jul 1, 2025
One-time-programmable memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12249662B2Mar 11, 2025
Semiconductor device, manufacturing method thereof, and detecting method using the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12211949B2Jan 28, 2025
Semiconductor detector
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12426517B2Sep 23, 2025
Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12041860B2Jul 16, 2024
Resistive memory device and method for manufacturing with protrusion of electrode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12588473B2Mar 24, 2026
Device, system and method for voltage generating
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12340839B2Jun 24, 2025
Memory device and system
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10763305B2Sep 1, 2020
Semiconductor structure with data storage structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10276726B2Apr 30, 2019
Non-volatile memory cell and non-volatile memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
EMEMORY TECHNOLOGY INC
5 patentsUS6518126B2Feb 11, 2003
Method of forming and operating trench split gate non-volatile flash memory cell structure
EMEMORY TECHNOLOGY INC36 citations91
US8384155B2Feb 26, 2013
Semiconductor capacitor
EMEMORY TECHNOLOGY INC8 citations84
US6842374B2Jan 11, 2005
Method for operating N-channel electrically erasable programmable logic device
EMEMORY TECHNOLOGY INC13 citations84
US6819594B2Nov 16, 2004
Electrically erasable programmable logic device
EMEMORY TECHNOLOGY INC11 citations70
US7551494B2Jun 23, 2009
Single-poly non-volatile memory device and its operation method
EMEMORY TECHNOLOGY INC3 citations63
LIN CHRONG-JUNG
5 patentsUS8107274B2Jan 31, 2012
Variable and reversible resistive element, non-volatile memory device and methods for operating and manufacturing the non-volatile memory device
LIN CHRONG-JUNG8 citations84
US8093649B2Jan 10, 2012
Flash memory cell
LIN CHRONG-JUNG3 citations62
US8547728B2Oct 1, 2013
Non-volatile memory device and methods for manufacturing the same
LIN CHRONG-JUNG1 citations52
US8184486B2May 22, 2012
Tunable current driver and operating method thereof
LIN CHRONG-JUNG1 citations52
US7903444B2Mar 8, 2011
One-time programmable memory and operating method thereof
LIN CHRONG-JUNG0 citations52
UNIV NAT TSING HUA
5 patentsUS12040028B2Jul 16, 2024
Low voltage one-time-programmable memory and array thereof
UNIV NAT TSING HUA0 citations62
US12142537B2Nov 12, 2024
Defect measurement method
UNIV NAT TSING HUA0 citations59
US11335609B2May 17, 2022
Micro detector
UNIV NAT TSING HUA1 citations59
US12431194B2Sep 30, 2025
Resistive random access memory unit with one-way conduction characteristic and fabricating method thereof
UNIV NAT TSING HUA0 citations52
US12262545B2Mar 25, 2025
Three-dimensional resistive random access memory structure
UNIV NAT TSING HUA0 citations52
SEMTECH CORP
3 patentsUS5880511AMar 9, 1999
Low-voltage punch-through transient suppressor employing a dual-base structure
SEMTECH CORP87 citations94
US6015999AJan 18, 2000
Low-voltage punch-through transient suppressor employing a dual-base structure
SEMTECH CORP34 citations91
USRE38608EOct 5, 2004
Low-voltage punch-through transient suppressor employing a dual-base structure
SEMTECH CORP18 citations82
MACRONIX INT CO LTD
2 patentsUS7590005B2Sep 15, 2009
Program and erase methods with substrate transient hot carrier injections in a non-volatile memory
MACRONIX INT CO LTD16 citations93
US7881112B2Feb 1, 2011
Program and erase methods with substrate transient hot carrier injections in a non-volatile memory
MACRONIX INT CO LTD7 citations84
UNIV CALIFORNIA
2 patentsAU OPTRONICS CORP
2 patentsVIA TECH INC
1 patentHSU TZU-HSUAN
1 patentCOPEE TECH COMPANY
1 patentVISHAY GEN SEMICONDUCTOR LLC
1 patentCHIANG WEN-JEN
1 patentTWIN HAN TECHNOLOGY CO LTD
1 patentNAT UNIV TSING HUA
1 patentShowing the top 50 of 61 patents by PatentIndex Score.