Inventor
JUNG DAE-SUB
CN15 patents
⚠️ This page may combine multiple inventors who share the name “JUNG DAE-SUB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEMICONDUCTOR MFG INT SHANGHAI CORP
13 patentsUS10411115B2Sep 10, 2019
Semiconductor device including a recessed insulation region and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP1 citations58
US10090403B2Oct 2, 2018
Power semiconductor device with semiconductor pillars
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations51
US9711627B2Jul 18, 2017
Power semiconductor device and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations51
US11545396B2Jan 3, 2023
Semiconductor structure and method for forming the same
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations49
US11239358B2Feb 1, 2022
Semiconductor structure with isolation structures in doped region and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations48
US10340304B2Jul 2, 2019
CMOS image sensor
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations48
US10038027B2Jul 31, 2018
CMOS image sensor and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP1 citations48
US10804105B2Oct 13, 2020
Semiconductor device and manufacture thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations46
US10600650B2Mar 24, 2020
Semiconductor device and manufacture thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations46
US10490629B2Nov 26, 2019
Method for fabricating power semiconductor device
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations46
US10032865B2Jul 24, 2018
Powers semiconductor device
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations46
US9536742B2Jan 3, 2017
Lateral double-diffused MOSFET and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations34
US10593781B2Mar 17, 2020
Semiconductor device and fabrication method thereof
SEMICONDUCTOR MFG INT SHANGHAI CORP0 citations31