P

Inventor

NAHAR MANUJ

US27 patents

Patents

27 patents
US9876018B2Jan 23, 2018

Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material

MICRON TECHNOLOGY INC27 citations94
US11552086B2Jan 10, 2023

Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material

MICRON TECHNOLOGY INC4 citations86
US10650978B2May 12, 2020

Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb

MICRON TECHNOLOGY INC7 citations84
US10748914B2Aug 18, 2020

Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material

MICRON TECHNOLOGY INC2 citations73
US11264395B1Mar 1, 2022

Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry

MICRON TECHNOLOGY INC2 citations71
US10553673B2Feb 4, 2020

Methods used in forming at least a portion of at least one conductive capacitor electrode of a capacitor that comprises a pair of conductive capacitor electrodes having a capacitor insulator there-between and methods of forming a capacitor

MICRON TECHNOLOGY INC3 citations71
US10886130B2Jan 5, 2021

Methods of forming crystalline semiconductor material, and methods of forming transistors

MICRON TECHNOLOGY INC2 citations69
US12237112B2Feb 25, 2025

Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic device comprising conductive material and ferroelectric material

MICRON TECHNOLOGY INC0 citations62
US12057472B2Aug 6, 2024

Devices comprising crystalline materials

MICRON TECHNOLOGY INC0 citations62
US11856790B2Dec 26, 2023

Ferroelectric capacitors

MICRON TECHNOLOGY INC0 citations62
US11676768B2Jun 13, 2023

Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices

MICRON TECHNOLOGY INC0 citations62
US11532699B2Dec 20, 2022

Devices comprising crystalline materials and related systems

MICRON TECHNOLOGY INC0 citations62
US11469043B2Oct 11, 2022

Electronic device comprising conductive material and ferroelectric material

MICRON TECHNOLOGY INC0 citations62
US11404217B2Aug 2, 2022

Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devices

MICRON TECHNOLOGY INC0 citations62
US10950384B2Mar 16, 2021

Method used in forming an electronic device comprising conductive material and ferroelectric material

MICRON TECHNOLOGY INC0 citations62
US12224310B2Feb 11, 2025

Single-crystal transistors for memory devices

MICRON TECHNOLOGY INC0 citations61
US12191354B2Jan 7, 2025

Vertical transistors having at least 50% grain boundaries offset between top and bottom source/drain regions and the channel region that is vertically therebetween

MICRON TECHNOLOGY INC0 citations61
US11862668B2Jan 2, 2024

Single-crystal transistors for memory devices

MICRON TECHNOLOGY INC1 citations61
US11728387B2Aug 15, 2023

Semiconductor devices comprising continuous crystalline structures, and related memory devices and systems

MICRON TECHNOLOGY INC0 citations61
US11695071B2Jul 4, 2023

Transistor and methods of forming transistors

MICRON TECHNOLOGY INC0 citations61
US11417730B2Aug 16, 2022

Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions

MICRON TECHNOLOGY INC0 citations61
US11018229B2May 25, 2021

Methods of forming semiconductor structures

MICRON TECHNOLOGY INC0 citations61
US10964811B2Mar 30, 2021

Transistor and methods of forming transistors

MICRON TECHNOLOGY INC0 citations61
US12432928B2Sep 30, 2025

Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry

MICRON TECHNOLOGY INC0 citations60
US11871582B2Jan 9, 2024

Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry

MICRON TECHNOLOGY INC0 citations60
US10923593B1Feb 16, 2021

Transistor and methods of forming transistors

MICRON TECHNOLOGY INC0 citations58
US10707298B2Jul 7, 2020

Methods of forming semiconductor structures

MICRON TECHNOLOGY INC0 citations51