Inventor
YANG TSUCHING
TW28 patents
Patents
28 patentsUS11710790B2Jul 25, 2023
Memory array channel regions
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11903214B2Feb 13, 2024
Three-dimensional ferroelectric random access memory devices and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11640974B2May 2, 2023
Memory array isolation structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12376310B2Jul 29, 2025
Memory cell having source or drain electrode with kink portion, memory array and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12471346B2Nov 11, 2025
Memory array isolation structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12382639B2Aug 5, 2025
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363907B2Jul 15, 2025
Memory device comprising conductive pillars
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12356628B2Jul 8, 2025
Memory device and method for making same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336183B2Jun 17, 2025
Three-dimensional ferroelectric random access memory devices and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302562B2May 13, 2025
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12288820B2Apr 29, 2025
Transistor, integrated circuit, and manufacturing method of transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12219777B2Feb 4, 2025
Memory array source/drain electrode structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218250B2Feb 4, 2025
Oxide semiconductor transistor structure in 3-d device and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12144182B2Nov 12, 2024
Memory device and method for making same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12068245B2Aug 20, 2024
Memory device, semiconductor device, and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12069863B2Aug 20, 2024
Method of forming memory device comprising conductive pillars
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12058860B2Aug 6, 2024
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11903213B2Feb 13, 2024
Memory device and method for making same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862726B2Jan 2, 2024
Transistor, integrated circuit, and manufacturing method of transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11856781B2Dec 26, 2023
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11729988B2Aug 15, 2023
Memory device comprising conductive pillars and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11729987B2Aug 15, 2023
Memory array source/drain electrode structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11696448B2Jul 4, 2023
Memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11569165B2Jan 31, 2023
Memory cell array, semiconductor device including the same, and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11545507B2Jan 3, 2023
Memory device and method for making same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11721767B2Aug 8, 2023
Oxide semiconductor transistor structure in 3-D device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12414295B2Sep 9, 2025
Semiconductor memory structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12272750B2Apr 8, 2025
Memory array channel regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52