Inventor
LAI SHENG-CHIH
TW102 patents
⚠️ This page may combine multiple inventors who share the name “LAI SHENG-CHIH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
43 patentsUS11171157B1Nov 9, 2021
Method for forming a MFMIS memory device
TAIWAN SEMICONDUCTOR MFG CO LTD26 citations94
US10644231B2May 5, 2020
Memory device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD22 citations94
US11424406B2Aug 23, 2022
Generating self-aligned heater for PCRAM using filaments
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11411025B2Aug 9, 2022
3D ferroelectric memory
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US10991756B2Apr 27, 2021
Bipolar selector with independently tunable threshold voltages
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations85
US11404476B2Aug 2, 2022
Bipolar selector with independently tunable threshold voltages
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11037952B2Jun 15, 2021
Peripheral circuitry under array memory device and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11710790B2Jul 25, 2023
Memory array channel regions
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11903214B2Feb 13, 2024
Three-dimensional ferroelectric random access memory devices and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11805658B2Oct 31, 2023
Magnetic random access memory and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11800718B2Oct 24, 2023
Semiconductor memory device with gate line passing through source/drain, channel and dielectric layers over via
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11792999B2Oct 17, 2023
Bipolar selector with independently tunable threshold voltages
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11729983B2Aug 15, 2023
Peripheral circuitry under array memory device and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11683988B2Jun 20, 2023
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11640974B2May 2, 2023
Memory array isolation structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11508753B2Nov 22, 2022
Embedded ferroelectric FinFET memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11189658B2Nov 30, 2021
Magnetic random access memory and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11081493B2Aug 3, 2021
Method for forming semiconductor memory device with sacrificial via
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10971682B2Apr 6, 2021
Method for fabricating memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11990169B2May 21, 2024
Transistorless memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11723199B2Aug 8, 2023
Protective liner layers in 3D memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10978473B2Apr 13, 2021
Flash memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12376310B2Jul 29, 2025
Memory cell having source or drain electrode with kink portion, memory array and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12464755B2Nov 4, 2025
Integrated circuit, transistor and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12464723B2Nov 4, 2025
Semiconductor memory device with vertical gate line
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12406708B2Sep 2, 2025
Memory device with unipolar selector
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12363911B2Jul 15, 2025
Semiconductor structure and method for forming thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12317541B2May 27, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12302583B2May 13, 2025
3D ferroelectric memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12266408B2Apr 1, 2025
Vertical fuse memory in one-time program memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12268005B2Apr 1, 2025
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12150311B2Nov 19, 2024
Embedded ferroelectric FinFET memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12137566B2Nov 5, 2024
Peripheral circuitry under array memory device and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11925030B2Mar 5, 2024
Method for forming a MFMIS memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11910733B2Feb 20, 2024
Generating self-aligned heater for PCRAM using filaments
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11856779B2Dec 26, 2023
Semiconductor device, memory array and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11832450B2Nov 28, 2023
Embedded ferroelectric FinFET memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11818882B2Nov 14, 2023
Vertical fuse memory in one-time program memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11800703B2Oct 24, 2023
Vertical fuse memory in one-time program memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11785779B2Oct 10, 2023
Method for forming a semiconductor memory structure using a liner layer as an etch stop
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11770935B2Sep 26, 2023
3D ferroelectric memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11721747B2Aug 8, 2023
Integrated circuit, transistor and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11545201B2Jan 3, 2023
Memory device with unipolar selector
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
MACRONIX INT CO LTD
4 patentsUS7816727B2Oct 19, 2010
High-κ capped blocking dielectric bandgap engineered SONOS and MONOS
MACRONIX INT CO LTD56 citations97
US7737488B2Jun 15, 2010
Blocking dielectric engineered charge trapping memory cell with high speed erase
MACRONIX INT CO LTD44 citations95
US7196924B2Mar 27, 2007
Method of multi-level cell FeRAM
MACRONIX INT CO LTD14 citations83
US9419010B2Aug 16, 2016
High aspect ratio etching method
MACRONIX INT CO LTD3 citations73
LAI SHENG-CHIH
2 patentsMACRON IX INT CO LTD
1 patentShowing the top 50 of 102 patents by PatentIndex Score.