Inventor

GONG NANBO

US44 patents

Patents

44 patents

US11232824B1Jan 25, 2022

Non-volatile analog resistive memory cells implementing ferroelectric select transistors

IBM16 citations94

US10784313B1Sep 22, 2020

Integrated resistive processing unit to avoid abrupt set of RRAM and abrupt reset of PCM

IBM12 citations86

US10832773B1Nov 10, 2020

Non-volatile analog resistive memory cells implementing ferroelectric select transistors

IBM0 citations62

US11915751B2Feb 27, 2024

Nonvolatile phase change material logic device

IBM0 citations62

US11805713B2Oct 31, 2023

Drift mitigation for resistive memory devices

IBM1 citations62

US11805714B2Oct 31, 2023

Phase change memory with conductive bridge filament

IBM0 citations62

US11727977B2Aug 15, 2023

Non-volatile analog resistive memory cells implementing ferroelectric select transistors

IBM0 citations62

US11688457B2Jun 27, 2023

Using ferroelectric field-effect transistors (FeFETs) as capacitive processing units for in-memory computing

IBM1 citations62

US11653578B2May 16, 2023

Phase-change material-based XOR logic gates

IBM1 citations62

US11647684B2May 9, 2023

Nonvolatile tunable capacitive processing unit

IBM1 citations62

US11631809B2Apr 18, 2023

In-memory resistive random access memory XOR logic using complimentary switching

IBM1 citations62

US11557342B2Jan 17, 2023

Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array

IBM0 citations62

US11322202B1May 3, 2022

Semiconductor logic circuits including a non-volatile memory cell

IBM0 citations62

US11139025B2Oct 5, 2021

Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array

IBM0 citations62

US12150392B2Nov 19, 2024

Transfer length phase change material (PCM) based bridge cell

IBM0 citations52

US12099616B2Sep 24, 2024

Physically unclonable function based on a phase change material array

IBM0 citations52

US11923458B2Mar 5, 2024

FeFET with double gate structure

IBM0 citations52

US11790243B1Oct 17, 2023

Ferroelectric field effect transistor for implementation of decision tree

IBM0 citations52

GONG NANBO

Patents

Non-volatile analog resistive memory cells implementing ferroelectric select transistors

Integrated resistive processing unit to avoid abrupt set of RRAM and abrupt reset of PCM

Architecture for enabling zero value shifting

Multi-level ferroelectric field-effect transistor devices

Resistive random-access memory random number generator

Temperature assisted programming of flash memory for neuromorphic computing

Memory erasure using proximity heaters

Ferroelectric field effect transistor with nanowire core

Phase change memory with conductive bridge filament

Memory device having separate programming and resistance readout control

Localized anneal of ferroelectric dielectric

Global heater for phase change memory

FeFET unit cells for neuromorphic computing

Temperature-assisted device with integrated thin-film heater

Transistor gates having embedded metal-insulator-metal capacitors

Phase change memory cell with ovonic threshold switch

ReRAM analog PUF using filament location

Physical unclonable function device with phase change

Low program voltage flash memory cells with embedded heater in the control gate

PCM cell with resistance drift correction

Phase change memory cell with ovonic threshold switch

PCM cell with resistance drift correction

Low-voltage flash memory integrated with a vertical field effect transistor

Semiconductor device including physical unclonable function

Solid-state switch

Piezoelectric memory

RRAM filament location for physically unclonable function

Phase-change material-based XOR logic gates

Non-volatile analog resistive memory cells implementing ferroelectric select transistors

Nonvolatile phase change material logic device

Drift mitigation for resistive memory devices

Phase change memory with conductive bridge filament

Non-volatile analog resistive memory cells implementing ferroelectric select transistors

Using ferroelectric field-effect transistors (FeFETs) as capacitive processing units for in-memory computing

Phase-change material-based XOR logic gates

Nonvolatile tunable capacitive processing unit

In-memory resistive random access memory XOR logic using complimentary switching

Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array

Semiconductor logic circuits including a non-volatile memory cell

Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array

Transfer length phase change material (PCM) based bridge cell

Physically unclonable function based on a phase change material array

FeFET with double gate structure

Ferroelectric field effect transistor for implementation of decision tree