Inventor

MULFINGER GEORGE R

US20 patents

⚠️ This page may combine multiple inventors who share the name “MULFINGER GEORGE R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MULFINGER GEORGE R

GLOBALFOUNDRIES INC

Self-aligned sacrificial epitaxial capping for trench silicide

Diffusion break forming after source/drain forming and related IC structure

Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same

Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same

Formation of enhanced faceted raised source/drain EPI material for transistor devices

Formation of enhanced faceted raised source/drain epi material for transistor devices

Faceted epitaxial source/drain regions

Self-aligned sacrificial epitaxial capping for trench silicide

Field-effect transistors with a grown silicon-germanium channel

Strain retention semiconductor member for channel SiGe layer of pFET

GLOBALFOUNDRIES US INC

Silicided gate structures

Semiconductor structure with shared well

Photonics chips including a fully-depleted silicon-on-insulator field-effect transistor

Photonics chips including a fully-depleted silicon-on-insulator field-effect transistor

Field-effect transistors with diffusion blocking spacer sections

Structure and method for random code generation

Asymmetrical lateral heterojunction bipolar transistors

Lateral heterojunction bipolar transistors with asymmetric junctions

Structure and method of forming spacers on unfaceted raised source/drain regions

Structure with different stress-inducing isolation dielectrics for different polarity FETs