Inventor
JAEGER DANIEL
US26 patents
⚠️ This page may combine multiple inventors who share the name “JAEGER DANIEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
19 patentsUS10373875B1Aug 6, 2019
Contacts formed with self-aligned cuts
GLOBALFOUNDRIES INC7 citations84
US10325819B1Jun 18, 2019
Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device
GLOBALFOUNDRIES INC15 citations84
US9761452B1Sep 12, 2017
Devices and methods of forming SADP on SRAM and SAQP on logic
GLOBALFOUNDRIES INC7 citations83
US10269654B1Apr 23, 2019
Methods, apparatus and system for replacement contact for a finFET device
GLOBALFOUNDRIES INC12 citations82
US9711624B1Jul 18, 2017
Methods for direct measurement of pitch-walking in lithographic multiple patterning
GLOBALFOUNDRIES INC2 citations73
US10644156B2May 5, 2020
Methods, apparatus, and system for reducing gate cut gouging and/or gate height loss in semiconductor devices
GLOBALFOUNDRIES INC5 citations72
US10418455B2Sep 17, 2019
Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device
GLOBALFOUNDRIES INC2 citations72
US10340142B1Jul 2, 2019
Methods, apparatus and system for self-aligned metal hard masks
GLOBALFOUNDRIES INC3 citations72
US9780002B1Oct 3, 2017
Threshold voltage and well implantation method for semiconductor devices
GLOBALFOUNDRIES INC2 citations72
US10204797B1Feb 12, 2019
Methods, apparatus, and system for reducing step height difference in semiconductor devices
GLOBALFOUNDRIES INC2 citations71
US9589829B1Mar 7, 2017
FinFET device including silicon oxycarbon isolation structure
GLOBALFOUNDRIES INC4 citations71
US10833160B1Nov 10, 2020
Field-effect transistors with self-aligned and non-self-aligned contact openings
GLOBALFOUNDRIES INC3 citations69
US10930549B2Feb 23, 2021
Cap structure
GLOBALFOUNDRIES INC0 citations61
US10522639B2Dec 31, 2019
Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device
GLOBALFOUNDRIES INC0 citations51
US10460986B2Oct 29, 2019
Cap structure
GLOBALFOUNDRIES INC0 citations50
US10249616B2Apr 2, 2019
Methods of forming a resistor structure between adjacent transistor gates on an integrated circuit product and the resulting devices
GLOBALFOUNDRIES INC0 citations42
US10388562B2Aug 20, 2019
Composite contact etch stop layer
GLOBALFOUNDRIES INC0 citations41
US10062612B2Aug 28, 2018
Method and system for constructing FINFET devices having a super steep retrograde well
GLOBALFOUNDRIES INC0 citations41
US10755982B1Aug 25, 2020
Methods of forming gate structures for transistor devices on an IC product
GLOBALFOUNDRIES INC0 citations37
GLOBALFOUNDRIES US INC
3 patentsUS10991796B2Apr 27, 2021
Source/drain contact depth control
GLOBALFOUNDRIES US INC2 citations72
US10971625B2Apr 6, 2021
Epitaxial structures of a semiconductor device having a wide gate pitch
GLOBALFOUNDRIES US INC0 citations58
US11907685B2Feb 20, 2024
Structure and method for random code generation
GLOBALFOUNDRIES US INC0 citations51