Inventor
HUNG STEVEN C H
US31 patents
Patents
31 patentsUS7317229B2Jan 8, 2008
Gate electrode structures and methods of manufacture
APPLIED MATERIALS INC19 citations92
US9748354B2Aug 29, 2017
Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof
APPLIED MATERIALS INC5 citations73
US11658218B2May 23, 2023
P-type dipole for p-FET
APPLIED MATERIALS INC2 citations72
US11289579B2Mar 29, 2022
P-type dipole for p-FET
APPLIED MATERIALS INC4 citations72
US11245022B2Feb 8, 2022
Integrated dipole flow for transistor
APPLIED MATERIALS INC2 citations72
US10347492B2Jul 9, 2019
Modifying work function of a metal film with a plasma process
APPLIED MATERIALS INC6 citations72
US11417517B2Aug 16, 2022
Treatments to enhance material structures
APPLIED MATERIALS INC2 citations71
US12288717B2Apr 29, 2025
Metal based hydrogen barrier
APPLIED MATERIALS INC0 citations62
US12230688B2Feb 18, 2025
MOSFET gate engineerinng with dipole films
APPLIED MATERIALS INC0 citations62
US12183798B2Dec 31, 2024
Threshold voltage modulation for gate-all-around FET architecture
APPLIED MATERIALS INC0 citations62
US12051734B2Jul 30, 2024
PMOS high-k metal gates
APPLIED MATERIALS INC0 citations62
US12020982B2Jun 25, 2024
Metal based hydrogen barrier
APPLIED MATERIALS INC0 citations62
US11996455B2May 28, 2024
P-type dipole for P-FET
APPLIED MATERIALS INC0 citations62
US11923441B2Mar 5, 2024
Gate all around I/O engineering
APPLIED MATERIALS INC0 citations62
US11552177B2Jan 10, 2023
PMOS high-K metal gates
APPLIED MATERIALS INC0 citations62
US11456178B2Sep 27, 2022
Gate interface engineering with doped layer
APPLIED MATERIALS INC0 citations62
US11450759B2Sep 20, 2022
Gate all around I/O engineering
APPLIED MATERIALS INC0 citations62
US11189479B2Nov 30, 2021
Diffusion barrier layer
APPLIED MATERIALS INC0 citations62
US11171047B2Nov 9, 2021
Fluorine-doped nitride films for improved high-k reliability
APPLIED MATERIALS INC0 citations62
US7541650B2Jun 2, 2009
Gate electrode structures
APPLIED MATERIALS INC5 citations62
US12112951B2Oct 8, 2024
Integrated dipole region for transistor
APPLIED MATERIALS INC0 citations61
US12100595B2Sep 24, 2024
Amorphous silicon-based scavenging and sealing EOT
APPLIED MATERIALS INC0 citations61
US11961734B2Apr 16, 2024
Treatments to enhance material structures
APPLIED MATERIALS INC0 citations61
US11955332B2Apr 9, 2024
Treatments to enhance material structures
APPLIED MATERIALS INC0 citations61
US11888045B2Jan 30, 2024
Integrated dipole flow for transistor
APPLIED MATERIALS INC0 citations61
US12575357B2Mar 10, 2026
Integrated wet clean for gate stack development
APPLIED MATERIALS INC0 citations52
US12249511B2Mar 11, 2025
Treatments to improve device performance
APPLIED MATERIALS INC0 citations51
US10510545B2Dec 17, 2019
Hydrogenation and nitridization processes for modifying effective oxide thickness of a film
APPLIED MATERIALS INC0 citations51
US10431466B2Oct 1, 2019
Hydrogenation and nitridization processes for modifying effective oxide thickness of a film
APPLIED MATERIALS INC0 citations51
US9275853B2Mar 1, 2016
Method of adjusting a transistor gate flat band voltage with addition of AL203 on nitrided silicon channel
APPLIED MATERIALS INC0 citations48
US9437640B2Sep 6, 2016
Engineering induced tunable electrostatic effect
APPLIED MATERIALS INC0 citations45